Product Information

2N6075AG

2N6075AG electronic component of ON Semiconductor

Datasheet
Triacs Sensitive Gate

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 1.4685 ( AUD 1.62 Inc GST) ea
Line Total: AUD 1.4685 ( AUD 1.62 Inc GST)

3040 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3040 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

Stock Image

2N6075AG
ON Semiconductor

1 : AUD 1.5038
10 : AUD 1.2968
100 : AUD 0.9182
500 : AUD 0.759
1000 : AUD 0.6546
2500 : AUD 0.598
5000 : AUD 0.5892

     
Manufacturer
Product Category
Package / Case
Packaging
Brand
Peak Repetitive Off-State Voltage Vdrm
On State Rms Current Itrms
Triac Case Style
Gate Trigger Current Max Qi Igt
Gate Trigger Voltage Max Vgt
Peak Gate Power
Peak Non Rep Surge Current Itsm 50Hz
Holding Current Max Ih
No. Of Pins
Operating Temperature Max
Svhc
Current Itsm
Current Itsm @ 60Hz
Current T2 G-
Current T2-G
Current T2-G-
Gate Trigger Current Igt Q1 T2 G
Gate Trigger Current Max Igt
Operating Temperature Min
Operating Temperature Range
Repetitive Reverse Voltage Vrrm Max
Termination Type
Thyristor Case
Thyristor Type
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Notes:- Show Stocked Products With Similar Attributes.

Thyristors Surface Mount 200V-600W > 2N6071A/B Series Pb 2N6071A/B Series Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features Sensitive Gate Triggering All Diffused and Glass Uniquely Compatible Passivated Junctions for Direct Coupling to for Greater Parameter TTL, HTL, CMOS and Uniformity and Stability Pin Out Operational Amplifier Small, Rugged, Integrated Circuit Logic Thermopad Construction Functions for Low Thermal Rear View Gate Triggering: 4 Mode - Resistance, High Heat Show Tab 2N6071A, B 2N6073A, B Dissipation and Durability 2N6075A, B Lead-free package T0-225 available Blocking Voltages to 600 V Case 077 Style 5 3 2 Functional Diagram 1 MT2 MT1 1. Cathode 2. Anode 3. Gate G Additional Information Datasheet Resources Samples 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/24/20Thyristors Surface Mount 200V-600W > 2N6071A/B Series Maximum Ratings and Thermal Characteristics (T = 25C unless otherwise noted) J Rating Symbol Value Unit *Peak Repetitive Off-State Voltage (Note 1) (T = -40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) 200 J V , DRM 2N6071A,B 400 - V RRM 2N6073A,B 600 2N6075A,B *On-State RMS Current (T = 85C) Full Cycle Sine Wave 50 to 60 Hz I 4.0 A C T(RMS) *Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, T = +110C) I 30 A J TSM Circuit Fusing Considerations (t = 8.3 ms) I 3.7 A2s 2t *Peak Gate Power (Pulse Width 1.0 s, T = 85C) P 10 W C GM *Average Gate Power (t = 8.3 ms, T = 85C) P 0.5 W C G(AV) *Peak Gate Voltage (Pulse Width 1.0 s, T = 85C) V 5.0 V C GM *Operating Junction Temperature Range T -40 to +110 C J *Storage Temperature Range T -40 to +150 C stg Mounting Torque (6-32 Screw) (Note 2) 8.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. DRM RRM 2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heatsink contact pad are common. Thermal Characteristics Rating Symbol Value Unit *Thermal Resistance, Junction to Case R 3.5 C/W 8JC Thermal Resistance, Junction to Ambient (Note 1) R 75 C/W 8JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L *Indicates JEDEC Registered Data. Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit - - 10 A *Peak Repetitive Blocking CurrentTJ = 25C (VD = VDRM = VRRM TJ = 25C IDRM, Gate Open)TJ = 110C TJ = 110C IRRM - - 2 mA Electrical Characteristics - ON (TC = 25C unless otherwise noted Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit *Peak On-State Voltage (Note 3) (I = 6.0 A Peak) C - - 2 V TM *Gate Trigger Voltage (Continuous DC), All Quadrants VGT - 1.4 2.5 V (Main Terminal Voltage = 12 Vdc, R = 100 , T = -40 C) L J Gate Non- Trigger Voltage, All Quadrants VGD .02 - - V (Main Terminal Voltage = 12 Vdc, RL = 100 , TJ = 110C) - - 30 *Holding Current T = -40C J IH mA (Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = 1 Adc) T = 25C J - - 15 Turn-On Time (I = 14 Adc, I = 100 mAdc) tgt - 1.5 - s TM GT QUADRANT (Maximum Value) Type IGT TJ I mA II mA III mA IV mA 2N6071A +25C 5 5 5 10 Gate Trigger Current (Continuous DC) 2N6073A -40C 20 20 20 30 (Main Terminal Voltage = 12 Vdc, RL = 100 ) 2N6075A 2N6071B +25C 3 3 3 5 2N6073B -40C 15 15 15 20 2N6075B 3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. *Indicates JEDEC Registered Data. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/24/20

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