Product Information

2N6073A

2N6073A electronic component of ON Semiconductor

Datasheet
Thyristor TRIAC 400V 30A 3-Pin(3+Tab) TO-225 Box

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

2671: AUD 0.2624 ( AUD 0.29 Inc GST) ea
Line Total: AUD 700.8704 ( AUD 770.96 Inc GST)

381151 - Global Stock
Ships to you between
Thu. 11 Jul to Wed. 17 Jul
MOQ: 2671  Multiples: 2671
Pack Size: 2671
Availability Price Quantity
7803 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 60
Multiples : 1

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2N6073A
ON Semiconductor

60 : AUD 4.3413
100 : AUD 3.049
250 : AUD 1.3125
500 : AUD 1.2317
1000 : AUD 1.1712

     
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RoHS - XON
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2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for fullwave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are 2N6071A/B Series MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit *Peak Repetitive OffState Voltage (Note 1) V V DRM, (T = 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) V J RRM 2N6071A,B 200 2N6073A,B 400 2N6075A,B 600 *OnState RMS Current (T = 85C) Full Cycle Sine Wave 50 to 60 Hz I 4.0 A C T(RMS) *Peak Non-repetitive Surge Current (One Full cycle, 60 Hz, T = +110C) I 30 A J TSM 2 2 Circuit Fusing Considerations (t = 8.3 ms) I t 3.7 A s *Peak Gate Power (Pulse Width 1.0 s, T = 85C) P 10 W C GM *Average Gate Power (t = 8.3 ms, T = 85C) P 0.5 W C G(AV) *Peak Gate Voltage (Pulse Width 1.0 s, T = 85C) V 5.0 V C GM *Operating Junction Temperature Range T -40 to +110 C J *Storage Temperature Range T -40 to +150 C stg Mounting Torque (632 Screw) (Note 2) - 8.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such DRM RRM that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower casetosink thermal resistance. Main terminal 2 and heatsink contact pad are common. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, Junction-to-Case R 3.5 C/W JC Thermal Resistance, Junction-to-Ambient R 75 C/W JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L *Indicates JEDEC Registered Data.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
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ON4
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onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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