Document Number: MMRF1015N Freescale Semiconductor Rev. 0, 7/2014 Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs MMRF1015NR1 Designed for Class A or Class AB power amplifier applications with MMRF1015GNR1 frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two--Tone Performance at 960 MHz: V =28Vdc,I = 125 mA, DD DQ P = 10 W PEP out Power Gain 18 dB 1--2000 MHz, 10 W, 28 V Drain Efficiency 32% CLASS A/AB IMD --37 dBc RF POWER MOSFETs Capable of Handling 10:1 VSWR 28 Vdc, 960 MHz, 10 W CW Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters On--Chip RF Feedback for Broadband Stability TO -- 270 -- 2 Operation Qualified Up to a Maximum of 32 V DD PLASTIC Integrated ESD Protection MMRF1015NR1 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13--inch Reel. TO--270G--2 PLASTIC MMRF1015GNR1 Gate21 Drain Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +68 Vdc DSS (Top View) Gate--Source Voltage V --0.5, +12 Vdc GS Note: Exposed backside of the package is Storage Temperature Range T --65 to +150 C stg the source terminal for the transistor. Case Operating Temperature T 150 C C Figure 1. Pin Connections (1,2) Operating Junction Temperature T 225 C J Table 2. Thermal Characteristics (2,3) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R 2.85 C/W JC Case Temperature 80C, 10 W PEP 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C Table 5. Electrical Characteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Off Characteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =68 Vdc, V =0 Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =28 Vdc, V =0 Vdc) DS GS Gate--Source Leakage Current I 1 Adc GSS (V =5 Vdc, V =0 Vdc) GS DS On Characteristics Gate Threshold Voltage V 1.5 2.3 3 Vdc GS(th) (V =10 Vdc, I = 100 Adc) DS D Gate Quiescent Voltage V 2 3.1 4 Vdc GS(Q) (V =28 Vdc, I = 125 mAdc, Measured in Functional Test) DD D Drain--Source On--Voltage V 0.15 0.27 0.35 Vdc DS(on) (V =10 Vdc, I =0.3 Adc) GS D Dynamic Characteristics Reverse Transfer Capacitance C 0.32 pF rss (V =28 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Output Capacitance C 10 pF oss (V =28 Vdc 30 mV(rms)ac 1 MHz, V =0 Vdc) DS GS Input Capacitance C 23 pF iss (V =28 Vdc, V =0 Vdc 30 mV(rms)ac 1 MHz) DS GS (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) V =28 Vdc, I = 125 mA, P = 10 W PEP, f = 960 MHz, Two--Tone DD DQ out Test, 100 kHz Tone Spacing Power Gain G 17.5 18 20.5 dB ps Drain Efficiency 31 32 % D Intermodulation Distortion IMD --37 --33 dBc Input Return Loss IRL --18 --10 dB Typical Performance (In Freescale 450 MHz Demo Board, 50 hm system) V =28 Vdc, I = 150 mA, P = 10 W PEP, 420--470 MHz, DD DQ out Two--Tone Test, 100 kHz Tone Spacing Power Gain G 20 dB ps Drain Efficiency 33 % D Intermodulation Distortion IMD --40 dBc Input Return Loss IRL --10 dB 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. MMRF1015NR1 MMRF1015GNR1 RF Device Data Freescale Semiconductor, Inc. 2