Product Information

BZX79C68

BZX79C68 electronic component of NXP

Datasheet
BZX79C68 ZENER DIODE 400MW 5% D0-35 AXI

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 0.0864 ( AUD 0.1 Inc GST) ea
Line Total: AUD 0.0864 ( AUD 0.1 Inc GST)

8768 - Global Stock
Ships to you by
Fri. 05 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8768 - Global Stock


Ships to you by Fri. 05 Jul

MOQ : 1
Multiples : 1
1 : AUD 0.0864
25 : AUD 0.0432
100 : AUD 0.0346
500 : AUD 0.0302
1000 : AUD 0.0292

     
Manufacturer
Product Category
Voltage Tolerance
Voltage Temperature Coefficient
Maximum Operating Temperature
Configuration
Mounting Style
Packaging
Minimum Operating Temperature
Height
Length
Package Case
Width
Brand
Ir Reverse Current
Pd Power Dissipation
Factory Pack Quantity :
Vz Zener Voltage
Zz Zener Impedance
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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product data sheet 2002 Feb 27 Supersedes data of 1999 May 25 NXP Semiconductors Product data sheet Voltage regulator diodes BZX79 series FEATURES Total power dissipation: max. 500 mW Two tolerance series: 2%, and approx. 5% Working voltage range: nom. 2.4 to 75 V (E24 range) Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage ka APPLICATIONS MAM239 Low voltage stabilizers or voltage references. DESCRIPTION Low-power voltage regulator diodes in hermetically sealed The diodes are type branded. leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24 2% (BZX79-B) and Fig.1 Simplified outline (SOD27 DO-35) and approx. 5% (BZX79-C) tolerance range. The series symbol. consists of 37 types with nominal working voltages from 2.4 to 75 V. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT I continuous forward current 250 mA F I non-repetitive peak reverse current t = 100 s square wave see Tables 1 and 2 A ZSM p T = 25 C prior to surge j P total power dissipation T = 50 C note 1 400 mW tot amb T = 50 C note 2 500 mW amb P non-repetitive peak reverse power t = 100 s square wave 40 W ZSM p dissipation T = 25 C prior to surge see Fig.3 j T storage temperature 65 +200 C stg T junction temperature 65 +200 C j Notes 1. Device mounted on a printed circuit-board without metallization pad lead length max. 2. Tie-point temperature 50 C max. lead length 8 mm. ELECTRICAL CHARACTERISTICS Total BZX79-B and BZX79-C series T = 25 C unless otherwise specified. j SYMBOL PARAMETER CONDITIONS MAX. UNIT V forward voltage I = 10 mA see Fig.4 0.9 V F F 2002 Feb 27 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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