Product Information

BYW29E-150/B

BYW29E-150/B electronic component of NXP

Datasheet
BYW29E-150/B BYW29E-150*

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 2.0132 ( AUD 2.21 Inc GST) ea
Line Total: AUD 2.0132 ( AUD 2.21 Inc GST)

0 - Global Stock
Ships to you by
Tue. 16 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you by Tue. 16 Jul

MOQ : 1
Multiples : 1
1 : AUD 2.0132
10 : AUD 1.0066
50 : AUD 0.8053
250 : AUD 0.7046
500 : AUD 0.6795

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Product
Brand
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

BYW29E-150 Ultrafast power diode 17 September 2013 Product data sheet 1. General description Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Fast switching Guaranteed ESD capability High thermal cycling performance Low on-state loss Low thermal resistance Rugged: reverse voltage surge capability Soft recovery minimizes power-consuming oscillations 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 150 V RRM voltage I average forward = 0.5 T 128 C square-wave - - 8 A F(AV) mb current pulse Fig. 1 Fig. 2 Static characteristics V forward voltage I = 8 A T = 25 C Fig. 4 - 0.92 1.05 V F F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 20 25 ns rr F R F T = 25 C ramp recovery Fig. 5 Fig. 7 j Electrostatic discharge V electrostatic discharge HBM C = 250 pF R = 1.5 k - - 8 kV ESD voltage Scan or click this QR code to view the latest information for this product TO-220ACNXP Semiconductors BYW29E-150 Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 001aaa020 2 A anode mb mb mounting base cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYW29E-150 TO-220AC plastic single-ended package heatsink mounted 1 mounting SOD59 hole 2-lead TO-220AC 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 150 V RRM V crest working reverse voltage - 150 V RWM V reverse voltage - 150 V R I average forward current = 0.5 T 128 C square-wave - 8 A F(AV) mb pulse Fig. 1 Fig. 2 I repetitive peak forward current = 0.5 t = 25 s T 128 C - 16 A FRM p mb square-wave pulse I non-repetitive peak forward t = 8.3 ms T = 25 C sine-wave - 88 A FSM p j(init) current pulse t = 10 ms T = 25 C sine-wave - 80 A p j(init) pulse I repetitive peak reverse current = 0.001 t = 2 s - 0.2 A RRM p BYW29E-150 All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 17 September 2013 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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