BYV79E-200.127 is an NXP bipolar junction transistor, designed for use in a variety of low-frequency and audio-frequency switching applications. It has a maximum collector current of 200mA, a capacitance of 4.2 pF, a maximum operating temperature of 150°C, and a breakdown voltage of 200V. It is made from revolutionary epitaxial silicon, which offers a much higher performance than traditional bipolars.