BYV34-600 Dual rectier diode ultrafast Rev. 01 4 October 2007 Product data sheet 1. Product prole 1.1 General description Ultrafast, dual common cathode, epitaxial rectier diode in a SOT78 (TO-220AB) plastic package. 1.2 Features n Fast switching n Low thermal resistance n Soft recovery characteristic n Low forward voltage drop n Low switching loss n High thermal cycling performance 1.3 Applications n Output rectiers in high frequency n Discontinuous Current Mode (DCM) switched-mode power supplies Power Factor Correction (PFC) 1.4 Quick reference data n V 600 V n I 20 A RRM O(AV) n V 1.16 V n t 60 ns F rr 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 anode 1 mb 2 cathode 1 3 3 anode 2 2 sym084 mb mounting base cathode 12 3 SOT78 (3-lead TO-220AB)BYV34-600 NXP Semiconductors Dual rectier diode ultrafast 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BYV34-600 TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage square waveform = 1.0 - 600 V R T 138 C mb I average output current square waveform = 0.5 -20 A O(AV) T 107 C both diodes conducting mb I repetitive peak forward current t = 25 s square waveform = 0.5 -20 A FRM T 107 C per diode mb I non-repetitive peak forward t = 10 ms sinusoidal waveform per - 120 A FSM current diode t = 8.3 ms sinusoidal waveform per - 132 A diode T storage temperature - 40 +150 C stg T junction temperature - 150 C j 5. Thermal characteristics Table 4. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R thermal resistance from junction to with heatsink compound - - 2.4 K/W th(j-mb) mounting base per diode see Figure 1 with heatsink compound - - 1.6 K/W both diodes conducting R thermal resistance from junction to ambient in free air - 60 - K/W th(j-a) BYV34-600 1 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 4 October 2007 2 of 9