BYV29FX-600 Enhanced ultrafast power diode 30 January 2018 Product data sheet 1. General description Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Isolated package Low thermal resistance Low on-state losses High thermal cycling performance Soft recovery characteristic 3. Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 72 C 9 A F(AV) h Fig. 1 Fig. 2 I repetitive peak forward = 0.5 t = 25 s T 72 C 18 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 91 A FSM p j(init) forward current Fig. 3 t = 8.3 ms T = 25 C sine-wave pulse 100 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 8 A T = 25 C Fig. 5 - 1.45 1.9 V F F j I = 8 A T = 150 C Fig. 5 - 1.25 1.7 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 17.5 35 ns rr F R F T = 25 C Fig. 6 jWeEn Semiconductors BYV29FX-600 Enhanced ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (2-lead TO-220F) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV29FX-600 TO-220F plastic single-ended package isolated heatsink mounted SOD113 1 mounting hole 2-lead TO-220full pac 7. Marking Table 4. Marking codes Type number Marking codes BYV29FX-600 BYV29FX-600 BYV29FX-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 January 2018 2 / 11