Product Information

BYC5-600P

BYC5-600P electronic component of NXP

Datasheet
NXP Semiconductors Rectifiers Hyperfast power diode

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : AUD 1.309
10 : AUD 1.0593
100 : AUD 0.6842
1000 : AUD 0.5467
2000 : AUD 0.5315
5000 : AUD 0.5315
10000 : AUD 0.5298
25000 : AUD 0.4981
50000 : AUD 0.4893
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Product
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

BYC5-600P Hyperfast power diode Rev.01 - 1 March 2018 Product data sheet 1. General description Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits Low reverse recovery current Low thermal resistance Low leakage current Reduces switching losses in associated MOSFET or IGBT 3. Applications Continuous Current Mode (CCM) Power Factor Correction (PFC) Half-bridge/full-bridge switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V repetitive peak reverse 600 V RRM voltage I average forward current = 0.5 square-wave pulse T 133 C 5 A F(AV) mb Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 133 C 10 A FRM p mb current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave pulse 60 A FSM p j(init) forward current Fig. 4 t = 8.3 ms T = 25 C sine-wave pulse 65 A p j(init) Symbol Parameter Conditions Min Typ Max Unit Static characteristics V forward voltage I = 5 A T = 25 C Fig. 6 - 2.5 3.3 V F F j I = 5 A T = 150 C Fig. 6 - 1.4 2.1 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 200 A/s - 11 - ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYC5-600P Hyperfast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 K cathode 2 A anode K A 001aaa020 mb mb mounting base connected to cathode 1 2 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BYC5-600P TO-220AC plastic single-ended package heatsink mounted SOD59 1 mounting hole 2-lead TO-220AC 7. Marking Table 4. Marking codes Type number Marking codes BYC5-600P BYC5-600P BYC5-600P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 1 March 2018 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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