Product Information

BLF544

BLF544 electronic component of NXP

Datasheet
BLF544 RF POWER MOSFET T/HOLE

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 196.6944 ( AUD 216.36 Inc GST) ea
Line Total: AUD 196.6944 ( AUD 216.36 Inc GST)

17 - Global Stock
Ships to you by
Tue. 16 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17 - Global Stock


Ships to you by Tue. 16 Jul

MOQ : 1
Multiples : 1

Stock Image

BLF544
NXP

1 : AUD 196.6944
10 : AUD 98.3472
50 : AUD 78.6778
250 : AUD 68.843
500 : AUD 66.3844

     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Type
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

BLF544 UHF power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication UHF power MOS transistor BLF544 FEATURES PINNING - SOT171A High power gain PIN DESCRIPTION Easy power control 1 source Good thermal stability 2 source Gold metallization ensures excellent reliability 3 gate Designed for broadband operation. 4 drain 5 source APPLICATIONS 6 source Communication transmitters in the UHF frequency range. 2 4 6 handbook, halfpage DESCRIPTION d N-channel enhancement mode vertical D-MOS power g s transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the 1 3 5 Top view MAM390 flange. A marking code showing gate-source voltage (V ) GS information is provided for matched pair applications. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at T =25 C in a common source class-B circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 500 28 20 >11 >50 CW, class-B 960 28 20 typ. 7 typ. 50 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 18 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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