BGA2800 MMIC wideband amplifier Rev. 5 13 July 2015 Product data sheet 1. Product profile 1.1 General description Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits Internally matched to 50 A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz Output power at 1 dB gain compression = 1 dBm Supply current = 10.5 mA at a supply voltage of 3.3 V Reverse isolation > 30 dB up to 2 GHz Good linearity with low second order and third order products Noise figure = 4 dB at 950 MHz Unconditionally stable (K > 1) 1.3 Applications LNB IF amplifiers General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz 2. Pinning information Table 1. Pinning Pin Description Simplified outline Graphic symbol 1V CC 2, 5 GND2 3RF OUT 4 GND1 6RF IN P V BGA2800 NXP Semiconductors MMIC wideband amplifier 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BGA2800 - plastic surface-mounted package 6 leads SOT363 4. Marking Table 3. Marking Type number Marking code Description BGA2800 *E7 * = - : made in Hong Kong * = p : made in Hong Kong * = W : made in China * = t : made in Malaysia 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V supply voltage RF input AC coupled 0.5 +5.0 V CC I supply current - 55 mA CC P total power dissipation T = 90 C-200mW tot sp T storage temperature 40 +125 C stg T junction temperature - 125 C j P drive power - +10 dBm drive 6. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit R thermal resistance from junction to P = 200 mW T =90 C 300 K/W th(j-sp) tot sp solder point 7. Characteristics Table 6. Characteristics V = 3.3 V Z = Z = 50 P = 40 dBm T = 25 C measured on demo board unless otherwise specified. CC S L i amb Symbol Parameter Conditions Min Typ Max Unit V supply voltage 3.0 3.3 3.6 V CC I supply current 8.8 10.5 12.1 mA CC BGA2800 All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved. Product data sheet Rev. 5 13 July 2015 2 of 18