DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BF862 N-channel junction FET Product specification 2000 Jan 05 Supersedes data of 1999 Jun 29NXP Semiconductors Product specification N-channel junction FET BF862 FEATURES PINNING SOT23 High transition frequency for excellent sensitivity in PIN DESCRIPTION AM car radios 1source High transfer admittance. 2drain 3gate APPLICATIONS Pre-amplifiers in AM car radios. handbook, halfpage 21 DESCRIPTION d Silicon N-channel symmetrical junction field-effect g s transistor in a SOT23 package. Drain and source are interchangeable. 3 Top view MAM036 Marking code: 2Ap. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 20 V DS V gate-source cut-off voltage 0.3 0.8 1.2 V GSoff I drain-source current 10 25 mA DSS P total power dissipation T 90 C 300 mW tot s y transfer admittance 35 45 mS fs T junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2000 Jan 05 2