DISCRETE SEMICONDUCTORS DATA SHEET BF1202 BF1202R BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification 2010 Sep 16 Supersedes data of 2000 Mar 29NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs BF1202 BF1202R BF1202WR FEATURES PINNING Short channel transistor with high PIN DESCRIPTION handbook, 2 columns3 4 forward transfer admittance to input 1source capacitance ratio 2drain Low noise gain controlled amplifier 3gate2 2 1 Partly internal self-biasing circuit to 4gate1 ensure good cross-modulation Top view MSB035 performance during AGC and good DC stabilization. Marking code legend: BF1202R marking code: LE* * = - : made in Hong Kong APPLICATIONS * = p : made in Hong Kong Fig.2 Simplified outline VHF and UHF applications with (SOT143R). * = t : made in Malaysia 3 to 9 V supply voltage, such as digital and analogue television tuners and professional communications equipment. handbook, 2 columns4 3 3 4 lfpage DESCRIPTION Enhancement type N-channel field-effect transistor with source and 12 21 substrate interconnected. Integrated Top view MSB014 Top view MSB842 diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202 marking code: LD* BF1202WR marking code: LE* BF1202R and BF1202WR are encapsulated in the SOT143B, Fig.1 Simplified outline Fig.3 Simplified outline SOT143R and SOT343R plastic (SOT143B). (SOT343R). packages respectively. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V drain-source voltage 10 V DS I drain current 30 mA D P total power dissipation 200 mW tot y forward transfer admittance 25 30 40 mS fs C input capacitance at gate 1 1.7 2.2 pF ig1-ss C reverse transfer capacitance f = 1 MHz 15 30 fF rss F noise figure f = 800 MHz 1.1 1.8 dB X cross-modulation input level for k = 1% at 100 105 dBV mod 40 dB AGC T operating junction temperature 150 C j CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2010 Sep 16 2