Product Information

BF1107,215

BF1107,215 electronic component of NXP

Datasheet
Transistors RF MOSFET N-Channel 3V 10mA

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : AUD 0.8712
10 : AUD 0.7238
100 : AUD 0.4675
1000 : AUD 0.374
3000 : AUD 0.373
9000 : AUD 0.373
24000 : AUD 0.3597
45000 : AUD 0.3539
99000 : AUD 0.3463
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Configuration
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Brand
Gate-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
Height
Length
Type
Width
Number Of Channels
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vgs Th - Gate-Source Threshold Voltage
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Notes:- Show Stocked Products With Similar Attributes.

BF1107 N-channel single gate MOSFET Rev. 04 9 January 2007 Product data sheet 1. Product prole 1.1 General description The BF1107 is a depletion type eld-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features n Currentless RF switch 1.3 Applications n Various RF switching applications such as: u Passive loop through for VCR tuner u Transceiver switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit L on-state insertion loss V =V =0V ins(on) SG DG f = 50 MHz to 860 MHz R =R =50 - - 2.5 dB S L R =R =75 - - 3.5 dB S L ISL off-state isolation V =V =5V off SG DG f = 50 MHz to 860 MHz R =R =50 30 --dB S L R =R =75 30 --dB S L R drain-source on-state V =0V I = 1 mA - 12 20 DSon GS D resistance V gate-source pinch-off V =1V I =20 A- - 3 - 4.5 V GS(p) DS D voltageBF1107 NXP Semiconductors N-channel single gate MOSFET 2. Pinning information Table 2. Discrete pinning Pin Description Simplied outline Symbol 1 1 drain 3 1 1 2 source 3 gate 3 2 12 sym120 1 Drain and source are interchangeable 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF1107 - plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking Type number Marking code BF1107 S3p 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 3 V DS V source-drain voltage - 3 V SD V drain-gate voltage - 7 V DG V source-gate voltage - 7 V SG I drain current - 10 mA D T storage temperature - 65 +150 C stg T junction temperature - 150 C j BF1107 4 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 04 9 January 2007 2 of 8

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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