Product Information

BB181,335

BB181,335 electronic component of NXP

Datasheet
Varactor Diodes VHF 30V 17pF Variable Cap

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 20000
Multiples : 20000
20000 : AUD 0.1712
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
If - Forward Current
Mounting Style
Termination Style
Package / Case
Configuration
Packaging
Brand
Minimum Tuning Ratio
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Notes:- Show Stocked Products With Similar Attributes.

BB181 VHF variable capacitance diode Rev. 03 16 February 2009 Product data sheet 1. Product prole 1.1 General description The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. 1.2 Features n Excellent linearity n Ultra small plastic SMD package n C : 1 pF C to C ratio : 14 d(28V) d(0V5) d(28V) 1.3 Applications n Electronic tuning in satellite tuners n Tunable coupling n Voltage Controlled Oscillators (VCO) 2. Pinning information Table 1. Pinning Pin Description Simplied outline Graphic symbol 1 1 cathode 2 anode 1 2 sym008 1 The marking bar indicates the cathode. 3. Ordering information Table 2. Ordering information Type number Package Name Description Version BB181 SC-79 plastic surface mounted package 2 leads SOD523BB181 NXP Semiconductors VHF variable capacitance diode 4. Marking Table 3. Marking codes Type number Marking code BB181 N 5. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V reverse voltage - 30 V R I forward current - 20 mA F T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j 6. Characteristics Table 5. Characteristics T = 25 C unless otherwise specied. j Symbol Parameter Conditions Min Typ Max Unit I reverse current see Figure 2 R V =30V - - 10 nA R V =30V T =85 C - - 200 nA R j r diode series resistance f = 470 MHz at C =9pF - - 3 s d C diode capacitance f = 1 MHz see Figure 1 and d Figure 3 V = 0.5 V 8 - 17 pF R V = 28 V 0.7 - 1.055 pF R C /C diode capacitance ratio (0.5 V to 28 V) f = 1 MHz 12 - 16 d(0V5) d(28V) BB181 3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 16 February 2009 2 of 6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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