DocumentNumber:AFT05MP075N FreescaleSemiconductor Rev. 1, 8/2014 Technical Data RFPowerLDMOSTransistors HighRuggedness N--Channel AFT05MP075NR1 Enhancement--ModeLateral MOSFETs AFT05MP075GNR1 Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier 136520MHz,70W,12.5V applications in mobile radio equipment. BROADBAND TypicalPerformance: 12.5 V, T =25 C, CW RFPOWERLDMOSTRANSISTORS A G P ps D out Frequency (dB) (%) (W) 136 MHz 21.0 68.0 76 (1) 450--520 MHz 14.6 65.8 75 (2) 520 MHz 18.5 68.5 70 TO--270WB--4 LoadMismatch/Ruggedness AFT05MP075NR1 Signal Frequency P Test in Type VSWR (MHz) (W) Voltage Result (2) 520 CW >65:1 at all 2 17 NoDevice Phase Angles (3 dB Overdrive) Degradation 1. Measured in 450--520 MHz UHFbroadband reference circuit. 2. Measured in 520 MHz narrowband test circuit. TO--270WBG--4 AFT05MP075GNR1 Features Characterizedfor Operationfrom 136to520MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization IntegratedESD Protection IntegratedStability Enhancements Wideband Full Power Across the Band GateA DrainA Exceptional Thermal Performance ExtremeRuggedness HighLinearity for: TETRA, SSB, LTE DrainB GateB In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. TypicalApplications Output Stage VHF Band Mobile Radio (Top View) Output Stage UHF Band Mobile Radio Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections FreescaleSemiconductor, Inc., 20132014. All rights reserved. AFT05MP075NR1AFT05MP075GNR1 RF DeviceData Freescale Semiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +40 Vdc DSS Gate--Source Voltage V --6.0, +12 Vdc GS Operating Voltage V 17, +0 Vdc DD Storage Temperature Range T --65 to +150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +225 C J TotalDevice Dissipation T =25 C P 690 W C D Derate above 25 C 3.45 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.29 C/W JC Case Temperature 80C, 70 W CW, 12.5 Vdc, I =400 mA, 520 MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2, passes 2500V Machine Model(perEIA/JESD22--A115) A,passes 250V Charge Device Model(perJESD22--C101) IV, passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 3 Adc DSS (V =40Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2 Adc DSS (V =12.5Vdc, V =0Vdc) DS GS Gate--Source Leakage Current I 600 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics Gate Threshold Voltage V 1.7 2.1 2.5 Vdc GS(th) (V =10Vdc,I =295 Adc) DS D Drain--Source On--Voltage V 0.14 Vdc DS(on) (V =10Vdc,I =3.0Adc) GS D (4) Forward Transconductance g 7.3 S fs (V =10Vdc,I =8Adc) GS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at