DocumentNumber:AFM907N NXPSemiconductors Rev. 1, 05/2019 TechnicalData RFPowerLDMOSTransistor HighRuggedness N--Channel AFM907N Enhancement--ModeLateral MOSFET Designed for handheld two--way radio applications with frequencies from 136to941MHz.Thehighgain,ruggednessandwidebandperformanceofthis device make it ideal for large--signal, common--source amplifier applications in 136941MHz,8W,7.5V handheldradioequipment. WIDEBAND WidebandPerformance (In 350520 MHz reference circuit, 7.5Vdc,T =25 C,CW) A AIRFASTRFPOWERLDMOS TRANSISTOR Frequency P G P in ps D out (1) (MHz) (W) (dB) (%) (W) 350 0.25 15.2 56.6 8.4 435 0.25 15.5 61.5 8.9 520 0.25 15.0 64.2 7.9 NarrowbandPerformance (7.5Vdc,T =25 C,CW) A Frequency G P ps D out (MHz) (dB) (%) (W) DFN4 6 (2) 520 20.7 73.9 8.4 LoadMismatch/Ruggedness N.C. N.C. 1 16 Frequency Signal P Test in N.C. (MHz) Type VSWR (dBm) Voltage Result N.C. 2 15 (2) Gate 3 Drain 520 CW >65:1 at all 21 10.8 NoDevice 14 PhaseAngles (3dB Overdrive) Degradation Gate Drain 4 13 1. Measuredin350520MHz UHFbroadbandreferencecircuit(page5). Drain Gate 5 12 2. Measuredin520MHz narrowbandRFtestfixture(page9). Gate 6 11 Drain Features 7 10 N.C. N.C. Characterizedfor operationfrom 136to941MHz 8 9 N.C. N.C. Unmatchedinput andoutput allowingwidefrequency rangeutilization (TopView) IntegratedESD protection Note: Exposed backside of the package is Integratedstability enhancements thesourceterminalforthetransistor. Wideband fullpower across theband Figure1.PinConnections Exceptionalthermalperformance Extremeruggedness Highlinearity for: TETRA, SSB TypicalApplications Output stageVHF bandhandheldradio Output stageUHF bandhandheldradio Output stagefor 700800MHz handheldradio 2017, 2019NXPB.V. AFM907N RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+30 Vdc DSS Gate--SourceVoltage V 6.0,+12 Vdc GS OperatingVoltage V 0to12.5 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperature T 40to+150 C J TotalDeviceDissipation T =25 C P 65.7 W C D Derateabove25 C 0.52 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 1.9 C/W JC CaseTemperature79C,7.4W CW,7.5Vdc,I =100mA,520MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C,passes 1000V ChargeDeviceModel(perJESD22--C101) C3,passes 2000V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =30Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 2 Adc DSS (V =7.5Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 nAdc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 1.6 2.1 2.6 Vdc GS(th) (V =10Vdc,I =110 Adc) DS D Drain--SourceOn--Voltage V 0.12 Vdc DS(on) (V =10Vdc,I =1.1Adc) GS D ForwardTransconductance g 9.8 S fs (V =7.5Vdc,I =3Adc) DS D DynamicCharacteristics ReverseTransferCapacitance C 2.4 pF rss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 55.2 pF oss (V =7.5Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 95.7 pF iss (V =7.5Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat