Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of 74CBTLV16211 24-bit bus switch Rev. 7 9 November 2016 Product data sheet 1. General description The 74CBTLV16211 provides a dual 12-bit high-speed bus switch with separate output enable inputs (1OE, 2OE). The low on-state resistance of the switch allows connections to be made with minimal propagation delay. The switch is disabled (high-impedance OFF-state) when the output enable (nOE) input is HIGH. To ensure the high-impedance OFF-state during power-up or power-down, 1OE and 2OE should be tied to the V through a pull-up resistor. The minimum value of the resistor is CC determined by the current-sinking capability of the driver. Schmitt trigger action at control input makes the circuit tolerant to slower input rise and fall times across the entire V range from 2.3 V to 3.6 V. CC This device is fully specified for partial power-down applications using I . OFF The I circuitry disables the output, preventing the damaging backflow current through OFF the device when it is powered down. 2. Features and benefits Supply voltage range from 2.3 V to 3.6 V High noise immunity Complies with JEDEC standard: JESD8-5 (2.3 V to 2.7 V) JESD8-B/JESD36 (2.7 V to 3.6 V) ESD protection: HBM JESD22-A114F exceeds 2000 V MM JESD22-A115-A exceeds 200 V CDM AEC-Q100-011 revision B exceeds 1000 V 5 switch connection between two ports Rail to rail switching on data I/O ports CMOS low power consumption Latch-up performance exceeds 250 mA per JESD78B Class I level A I circuitry provides partial Power-down mode operation OFF TSSOP56 packages: SOT364-1 and SOT481-2 Specified from 40 Cto+85 C and 40 Cto+125 C