NTE459 NChannel Silicon JFET Transistor AF Amplifier/Chopper/Switch TO72 Type Package Absolute Maximum Ratings: (T = +25 C unless otherwise specified) A DrainSource Voltage, V .......................................................... 50V DS DrainGate Voltage, V ............................................................ 50V DG GateSource Voltage, V ......................................................... 50V GS Drain Current, I ................................................................. 10mA D Total Device Dissipation (T = +25 C), P ......................................... 300mW A D Derate Above 25 C ....................................................... 2mW/ C Operating Junction Temperature, T ............................................... +175 C J Storage Temperature Range, T .......................................... 55 to +200 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 1 A, V = 0 50 V (BR)GSS G DS Gate Reverse Current I V = 30V, V = 0 0.1 nA GSS GS DS V = 30V, V = 0, T = +150 C 100 nA GS DS A GateSource Cutoff Voltage V I = 0.5nA, V = 15V 6 V GS(off) D DS GateSource Voltage V I = 200 A, V = 15V 1 4 V GS D DS ON Characteristics ZeroGateVoltage Drain Current I V = 15V, V = 0, Note 1 2 10 mA DSS DS GS SmallSignal Characteristics Forward Transfer Admittance y V = 15V, V = 0, f = 1kHz, 3000 6500 mho fs DS GS Note 1 V = 15V, V = 0, f = 100MHz 3000 mho DS GS Output Admittance y V = 15V, V = 0, f = 1kHz, 20 mho os DS GS Note 1 Input Capacitance C V = 15V, V = 0, f = 1MHz 6 pF iss DS GS Reverse Transfer Capacitance C V = 15V, V = 0, f = 1MHz 3 pF rss DS GS Note 1. Pulse Test: Pulse Width 100ms, Duty Cycle 10%. Rev. 1013Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Functional Characteristics Noise Figure NF V = 15V, V = 0, R = 1M , 5 dB DS GS G f = 10Hz, BW = 5Hz 1/2 Equivalent ShortCircuit Input Noise e V = 15V, V = 0, f = 10Hz, 200 nV/Hz n DS GS Voltage BW = 5Hz .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) D Min G S .018 (0.45) Dia Drain Source Gate 45 Case .040 (1.02)