NTE461 Silicon NChannel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper TO71 Type Package Features: D High Input Impedance: I 50pA G G Minimum System Error and Calibrations S TO71 Case Style Absolute Maximum Ratings: Gate Drain or Gate Source Voltage .................................................. 50V Gate Current .................................................................... 30mA Device Dissipation (T = +25 C, Each Side) ....................................... 250mW A Derate Above 25 C .................................................... 1.67mW/ C Total Device Dissipation (T = +25 C) ............................................. 400mW A Derate Above 25 C .................................................... 2.67mW/ C Storage Temperature Range .............................................. 65 to +200 C Lead Temperature (During Soldering, 1/16 from case for 30sec) ...................... +300 C Electrical Characteristics: (T = +25 C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics GateSource Breakdown Voltage V I = 1 A, V = 0 50 V (BR)GSS G DS Gate Reverse Current I V = 30V, V = 0 100 pA GSS GS DS GateSource Cutoff Voltage V V = 15V, I = 0.5nA 0.5 4.5 V GS(off) DG D Saturation Drain Current I V = 15V, V = 0 0.5 8.0 mA DSS DS GS Gate Operating Current I V = 15V, I = 200 A 50 pA G DG D Dynamic Characteristics Forward Transcondutance g g = 1kHz 1500 6000 mhos fs Input Capacitance C V = 15V, V = 0 6 pF iss DS GS Reverse Transfer Capacitance C V = 15V, V = 0 2 pF rss DS GS Rev. 1013Electrical Characteristics (Contd): (T = +25 C, unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Matching Characteristics Differential Gate Current I I V = 15V, I = 200 A, T = +25 C 5 nA G1 G2 DG D A Saturation Drain Current Ratio I /I V = 15V, V = 0, Note 1 0.95 1.0 DSS1 DSS2 DS GS Differential GateSource Voltage V V V = 15V I = 50 A 15 mV GS1 GS2 GD D I = 200 A 15 mV D GateSource Voltage V = 15V, T = +25 C/T = +125 C 40 V/ C DG A B Differential Drift I = 200 A, D T = 55 C/T = +25 C 40 V/ C Note 2 A B Transconductance Ratio g /g 0.95 1.0 fs1 fs2 Differential Output Conductance g g 3 mhos os1 os2 Note 1. Assumes smaller value in numerator. Note 2. Measured at end points, T and T . A B .230 (5.84) Dia Max .195 (4.95) Dia Max .190 (4.82) .500 (12.7) Min .018 (0.45) Dia .100 (2.54) Dia .050 (1.27) 3 2 1 5 6 45 7 .038 (0.96) .041 (1.04) Pin 1 S1 Pin 2 D1 Pin 3 G1 Pin4 and Pin8 are Omitted Pin 5 S2 All Leads are Isolated from Case Pin 6 D2 Pin 7 G2