MP3360 Highly Integrated Photo Flash Charger and IGBT Driver The Future of Analog IC T echnology DESCRIPTION FEATURES The MP3360 is a fast, highly efficient and Integrated 60V, 0.5 Power Switch precision high voltage photo-flash charger for Single wire digital interface for current limit camera phone xenon flash. programming. 2.5% Charge Accuracy The MP3360 has programmable peak currents <1uA Shutdown Current of 1.5A/1.4A/1.3A/1.2A/1.1A/1.0A/0.9A/0.8A Integrated IGBT Driver with Regulated Gate /0.75A/0.7A/0.65A/0.6A/0.55A/0.5A/0.45A/0.4A. Voltage A 60V, 0.5 internal power switch lowers transformer turns ratio and switching losses APPLICATIONS associated with the primary leakage inductance Mobile Phones with Xeon Flash and winding capacitance. Integrated secondary feedback resistors provide +/-2.5% output Digital Still Cameras voltage charge accuracy. MP3360 also has an Optical Film Cameras integrated IGBT driver with a regulated 2.7V PDAs with Xeon Flash gate voltage. MPS and The Future of Analog IC Technology are Registered Trademarks of Monolithic Power Systems, Inc. MP3360 is available in the 10-pin, 2X2 flip chip package. TYPICAL APPLICATION T1 1 4 TP7 VIN 6 3 TP6 R2 R1 U1 499k 10 1206 9 3 VIN SW GND MP3360 8 T2 5 AGND FB TP8 13 6 CHAG CHG 2 Xenon Flash IGBTOUT 2 4 RDYB RDYB 10 1 VIGBT IGBTIN IGBTIN PGND TP9 7 600V/1A R3 5, 6, 7, 8 1M 4 1, 2, 3 1206 MP3360 Rev. 0.9 www.MonolithicPower.com 1 1/29/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. 2010 MPS. All Rights Reserved. 1 3 2MP3360 HIGHLY INTEGRATED PHOTO FLASH CHARGER AND IGBT DRIVER ORDERING INFORMATION Part Number* Package Top Marking Free Air Temperature (T ) A MP3360 10-pin, 2x2 Flip QFN 4KY -40 C to +85 C For Tape & Reel, add suffix Z (e.g. MP3360DGZ) For RoHS Compliant Packaging, add suffix LF(e.g. MP3360DGLFZ) PACKAGE REFERENCE TOP VIEW VIGBT 10 1 9 VIN IGBTIN 2 8 AGND IGBTOUT SW 3 7 PGND RDYB 4 6 CHG 5 FB (1) (3) ABSOLUTE MAXIMUM RATINGS Recommended Operating Conditions Supply Voltage V .............................2.5V to 6V IN V to GND .........................................-0.3Vto 6V IN Operating Junct. Temp (T )...... -40 C to +125 C J CHG, IGBTIN, IGBTOUT, VIGBT, (4) RDYB to AGND .................................-0.3Vto 6V Thermal Resistance JA JC FB to AGND...................................-60V to 350V 2x2 Flip Chip ...........................80 ...... 16... C/W SW to AGND...................................-0.3V to 60V Notes: PGND to AGND ...........................-0.3V to +0.3V 1) Exceeding these ratings may damage the device. 2X2, 10 pin Flip Chip Thermal Resistance 2) The maximum allowable power dissipation is a function of the Operating Temperature Ranges ......................... maximum junction temperature T (MAX), the junction-to- J ambient thermal resistance , and the ambient temperature JA .............................................-20C to +85 C T . The maximum allowable continuous power dissipation at A Storage Temperature............... -55C to +150 C any ambient temperature is calculated by P (MAX) = (T D J Junction Temperature............................ +150C (MAX)-T )/ . Exceeding the maximum allowable power A JA (2) dissipation will cause excessive die temperature, and the Continuous Power Dissipation (T = +25C) A regulator will go into thermal shutdown. Internal thermal ....1.6W shutdown circuitry protects the device from permanent damage. Lead Temperature (Solder).....................+260C 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. MP3360 Rev. 0.9 www.MonolithicPower.com 2 1/29/2010 MPS Proprietary Information. Unauthorized Photocopy and Duplication Prohibited. 2010 MPS. All Rights Reserved.