WWW.Microsemi .COM UUMM99770011 UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode KEY FEATURES DESCRIPTION Specified low distortion The UM9701 PIN diode was designed for surfaces of the silicon chip. A glass low resistance at low forward bias current enclosure houses this bond in a reliable and Low Forward Resistance and low reverse bias capacitance. This hermetic package. The axial leads are unique Microsemi design results in both attached to refractory pins and do not touch High Reverse Resistance forward and reverse bias. the glass enclosure. High Voltage Capability These PIN diodes are characterized for Environmentally these, and all Microsemi low current drain RF and microwave PIN diodes, can withstand thermal cycling Good Power Handling switch applications particularly for digital from -195 C to + 300 C and exceed all filter switch designs. The construction military environmental specifications for Microsemi Ruggedness and reliability and geometry of these devices provide shock, vibration, acceleration, and moisture Compatible with automatic insertion good voltage and power handling resistance. equipment capability. These devices are constructed using a metallurgical full face bond to both APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM ELECTRICAL ELECTRICAL UM9701 Low Resistance, Low Distortion, RF Switching PIN Diode Electrical Specifications Test Symbol UM9701 Conditions Series Resistance (MAX) R 0.8 F = 100 MHz, I = 10 mA S F Total Capacitance (MAX) C 1.8 pF F = 1 MHz, V = 50 V T R Parallel Resistance (MIN) R 100 k F = 100 MHz, V = 50 V P R Carrier Lifetime (MIN) 1.5 s I = 10 mA F Reverse Current (MAX) I 10 A V = 100 V R R Forward Voltage (MAX) V 0.8 V I = 10 mA F F I = 10 mA F Forward Bias Third Order R 2ab/a -90 dB P = P = +20 dBm A B IM Distortion (MAX) f = 43 MHz, f = 44 MHz A B V = 50 V R Reverse Bias Third Order R 2ab/a -90 dB P = P = +20 dBm A B IM Distortion (MAX) f = 43 MHz, f = 44 MHz A B TYPICAL SERIES RESISTANCE VS FORWARD CURRENT 1 10 F = 100 MHz 0 10 -1 10 0 1 2 10 10 10 FORWARD CURRENT (mA) Copyright 2001 Microsemi Page 2 Rev. 0.02, 2006-04-27 Rs SEREIES RESISTANCE (Ohms)