MSC030SDA330B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microchip increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. The MSC030SDA330B device is a 3300 V, 30 A SiC SBD in a two-lead TO-247 package. Features The following are key features of the MSC030SDA330B device: No reverse recovery Low forward voltage Low leakage current RoHS compliant Benefits The following are benefits of the MSC030SDA330B device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density Applications The MSC030SDA330B device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode Datasheet DS-00004271A-page 1 2021 Microchip Technology Inc. and its subsidiaries MSC030SDA330B Device Specifications 1. Device Specifications This section shows the specifications of the MSC030SDA330B device. 1.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC030SDA330B device. T = 25 C unless C otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit V Maximum DC reverse voltage 3300 V R V Maximum peak repetitive reverse voltage RRM V Maximum working peak reverse voltage RWM I Maximum DC forward current T = 25 C 62 A F C T = 135 C 30 C T = 145 C 25 C I Repetitive peak forward surge current (T = 25 C, tp = 8.3 ms, half 93 FRM C sine wave) I Non-repetitive forward surge current (T = 25 C, tp = 8.3 ms, half 205 FSM C sine wave) P Total power dissipation T = 25 C 556 W TOT C T = 110 C 241 C The following table shows the thermal and mechanical characteristics of the MSC030SDA330B device. Table 1-2. Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min Typ Max Unit R Junction-to-case thermal resistance 0.19 0.27 C/W JC T , T Operating junction and storage temperature 55 175 C J STG range T Lead temperature for 10 seconds 300 L Wt Package weight 0.22 oz 6.2 g Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m DS-00004271A-page 2 Datasheet 2021 Microchip Technology Inc. and its subsidiaries