MSC030SDA070BCT Zero Recover y Silicon Carbide Schottky Dual Diode Product Over view The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. The MSC030SDA070BCT is a 700 V, 30 A SiC dual common cathode SBD in a three-lead TO-247 package shown below. Features The following are key features of the MSC030SDA070BCT device: No reverse recover y Low for ward voltage Low leakage current Avalanche energy rated RoHS compliant Benefits The following are benefits of the MSC030SDA070BCT device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density Applications The MSC030SDA070BCT device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4113 MSC030SDA070BCT Datasheet Revision A 1Device Specific ations Device Specific ations This section details the device specific ations for the MSC030SDA070BC T device. All ratings are per leg. Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC030SDA070BC T device. All ratings: T C = 25 C unless other wise specified. Table 1 Absolute Maximum Ratings Sym- Parameter Ratings Unit bol V Maximum DC reverse voltage 700 V R V Maximum peak repetitive reverse voltage 700 RRM V Maximum working peak reverse voltage 700 RWM I Maximum DC for ward current T = 25 C 60 A F C T = 135 C 25 C T = 145 C 21 C I Repetitive peak for ward surge current (T = 25 C, t = 8.3 ms, half sine 79 FRM C p wave) I Non-repetitive for ward surge current (T = 25 C, t = 8.3 ms, half sine 146 FSM C p wave) P Power dissipation T = 25 C 188 W tot C T = 110 C 81 C T , T Operating junction and storage temperature range 55 to 175 C J ST- G T Lead temperature for 10 seconds 300 L E Single pulse avalanche energy (starting T = 25 C, L = 0.22 mH, peak I = 100 mJ AS J L 30 A) The following table shows the thermal and mechanical characteristics of the MSC030SDA070BC T device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min Typ Max Unit R Junction-to-case thermal resistance 0.56 0.80 C/W JC Wt Package weight 0.22 oz 053-4113 MSC030SDA070BC T Datasheet Revision A 2