T O-247 DATASHEET APT75GN60B(G) APT75GN60S(G) 600V (B) 3 D PA K Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low V and CE(ON) (S) are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling C G E is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A CE(ON) built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low G C E gate charge simplifies gate drive design and minimizes losses. C 600V Field Stop Trench Gate: Low V CE(on) G Easy Paralleling 6s Short Circuit Capability E Intergrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C APT75GN60B S(G) Symbol Parameter UNIT V 600 Collector-Emitter Voltage CES Volts V Gate-Emitter Voltage 30 GE 8 I Continuous Collector Current T = 25C 155 C1 C 93 I Continuous Collector Current T = 110C Amps C2 C 1 225 I Pulsed Collector Current CM 225A 600V Switching Safe Operating Area T = 175C SSOA J P Total Power Dissipation 536 Watts D T ,T Operating and Storage Junction Temperature Range -55 to 175 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX Units V Collector-Emitter Breakdown Voltage (V = 0V, I = 4mA) 600 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 5.0 5.8 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 75A, T = 25C) 1.05 1.45 1.85 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 75A, T = 125C) 1.87 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 25 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 600 GES GE R Intergrated Gate Resistor 4 G(int) These Devices are Sensitive to Electrostatic Discharge Proper Handling Procedures Should Be Followed. 050-7619 Rev B 08/2016 2APT75GN60B S(G) DYNAMIC CHARACTERISTICS Characteristic Symbol MIN TYP MAX UNIT Test Conditions C Input Capacitance 4500 ies Capacitance C Output Capacitance 370 pF oes V = 0V, V = 25V GE CE C Reverse Transfer Capacitance 150 f = 1 MHz res V Gate-to-Emitter Plateau Voltage 9.5 V Gate Charge GEP 3 Q Total Gate Charge 485 V = 15V g GE Q V = 300V Gate-Emitter Charge 30 nC ge CE I = 75A Q Gate-Collector Mille) Charge 270 C gc 7 T = 175C, R = 4.3 , V = J G GE Switching Safe Operating Area SSOA 225 A 15V, L = 100H,V = 600V CE V = 600V, V = 15V, CC GE s SCSOA Short Circuit Safe Operating Area 6 7 T = 125C, R = 4.3 J G t 47 d(on) Turn-on Delay Time Inductive Switching (25C) t 48 Current Rise Time V = 400V r CC ns t V = 15V 385 d(off) Turn-off Delay Time GE t I = 75A 38 Current Fall Time f C 7 4 R = 1.0 E Turn-on Switching Energy G 2500 on1 5 T = +25C E Turn-on Switching Energy (Diode) J J 3725 on2 6 E Turn-off Switching Energy 2140 off t Turn-on Delay Time 47 d(on) Inductive Switching (125C) t Current Rise Time 48 r V = 400V CC ns t Turn-off Delay Time V = 15V 430 d(off) GE t I = 75A Current Fall Time 55 f C 7 4 4 R = 1.0 E 2600 Turn-on Switching Energy G on1 55 T = +125C E Turn-on Switching Energy (Diode) J 4525 J on2 66 E Turn-off Switching Energy 2585 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case (IGBT) .28 JC C/W R Junction to Case (DIODE) N/A JC W gm Package Weight 5.9 T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4 E is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off 7 R is external gate resistance, not including R nor gate driver impedance. (MIC4452) G G(int) 8 Continuous current limited by package pin temperature to 100A. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 050-7619 Rev 08/2016 3