The APT35GP120J is a single insulated gate bipolar transistor (IGBT) with PT Power MOS 7 capability manufactured by Microchip. This semiconductor device is primarily designed for use in high power applications such as motor control, solar inverters, and UPS systems. It features a power dissipation capability up to 120V/140A and can reach junction temperatures up to 175-degrees Celsius. With its fast switching speeds, the APT35GP120J can provide very efficient power conversion and its low gate charge makes it easy to drive. Additionally, the device operates with low EMI and can withstand 1000V HBM ESD for robust protection against high voltage spikes.