APT100GLQ65JU2 ISOTOP Boost chopper V = 650V CES High speed Trench + Field Stop IGBT4 I = 100A* Tc = 80C C Power Module Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch C Features High speed Trench + Field Stop IGBT 4 G - Low voltage drop - Low leakage current - Low switching losses ISOTOP Package (SOT-227) Very low stray inductance E Benefits Low conduction losses K Stable temperature behavior E Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive T of V C CEsat C G RoHS Compliant ISOTOP All ratings T = 25C unless otherwise specified j Absolute maximum ratings Symbol Parameter Max ratings Unit V Collector - Emitter Voltage 650 V CES T = 25C 165* C I Continuous Collector Current C T = 80C 100* A C I Pulsed Collector Current T = 25C 270 CM C V Gate Emitter Voltage 20 V GE P Power Dissipation 430 W D * Specification of IGBT device but output current must be limited due to size of output pins. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 1-6 www.microsemi.com APT100GLQ65JU2 Rev 0 August, 2016 APT100GLQ65JU2 Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit I Zero Gate Voltage Collector Current V = 0V, V = 650V 50 A CES GE CE T = 25C 1.4 1.85 2.3 V =15V j GE V Collector Emitter Saturation Voltage V CE(sat) I = 100A T = 150C C j 2.2 V Gate Threshold Voltage V = V , I = 1.6 mA 4.2 5.1 5.6 V GE(th) GE CE C I Gate Emitter Leakage Current V = 20V, V = 0V 150 nA GES GE CE Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 6100 ies GE V = 25V C Output Capacitance CE 232 pF oes f = 1MHz C Reverse Transfer Capacitance 180 res V = 15V, I = 100A GE C Q Gate charge 630 nC G V = 480V CE Inductive Switching (25C) T Turn-on Delay Time 19 d(on) V = 15V GE T Rise Time 33 r V = 400V ns Bus T Turn-off Delay Time 197 d(off) I = 100A C T Fall Time 21 f R = 3.6 G Inductive Switching (150C) T Turn-on Delay Time 19 d(on) V = 15V GE T Rise Time 29 r V = 400V ns Bus T Turn-off Delay Time 227 d(off) I = 100A C T Fall Time 22 f R = 3.6 G V = 15V GE E Turn on Energy T = 150C 2.4 on j V = 400V Bus mJ I = 100A C E Turn off Energy T = 150C 2 off j R = 3.6 G R Integrated gate resistor 2 G V 15V V = 400V GE Bus I Short Circuit data 700 A sc t 5s T = 150C p j R Junction to Case Thermal Resistance 0.35 C/W thJC Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit V Peak Repetitive Reverse Voltage 650 V RRM I Reverse Leakage Current V = 650V 50 A RM R I DC Forward Current Tc = 60C 50 A F I = 50A T = 25C 1.6 2 j F V Diode Forward Voltage V F V = 0V T = 150C 1.5 GE j T = 25C 100 j t Reverse Recovery Time ns rr T = 150C 150 j I = 50A F T = 25C 2.6 j V = 300V Q Reverse Recovery Charge C rr R T = 150C 5.4 j di/dt =1800A/s T = 25C 0.6 j E Reverse Recovery Energy mJ rr T = 150C 1.2 j R Junction to Case Thermal Resistance 1.14 C/W thJC 2-6 www.microsemi.com APT100GLQ65JU2 Rev 0 August, 2016