Product Information

2N6990

2N6990 electronic component of Microchip

Datasheet
Bipolar Transistors - BJT NPN Quad Transistor

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 98.12 ( AUD 107.93 Inc GST) ea
Line Total: AUD 98.12 ( AUD 107.93 Inc GST)

963 - Global Stock
Ships to you between
Fri. 12 Jul to Thu. 18 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
963 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 1

Stock Image

2N6990
Microchip

1 : AUD 98.12

963 - Global Stock


Ships to you between Fri. 12 Jul to Thu. 18 Jul

MOQ : 1
Multiples : 1

Stock Image

2N6990
Microchip

1 : AUD 98.12

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices Qualified Level JAN 2N6989 JANTX 2N6990 2N6989U JANTXV JANS (1) MAXIMUM RATINGS Ratings Symbol Value Units C - Emitter Voltage 50 V CEO - 75 TO - 116* V Emitter - 6.0 V EBO 800 I C 0 Total Power Dissipation T = +25 C A 1.5 W P D 1.0 0.4 0 Operat - 65 to +200 C T T op , 1) Maximum voltage between transistors shall be 0 0 2) Derate linearly 8.57 mW/ = +25 A 0 0 Derate linearly 2.286 mW/ = +25 A Ratings apply to total package. 3) Ratings apply to each transistor in the array. 0 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS - V 50 CEO I C - V = 60 Vdc I 10 V = 10 10 c Emitter - f Current V I EB EBO 10 V = 10 10 EB c 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page Adc Adc = 6.0Vdc I Adc = 4.0Vdc Base Cutof CB Adc Adc = 75 Vdc I Adc CBO CB Base Cutoff Current Collector = 10 mAdc (BR) Vdc Emitter Breakdown Voltage Collector outline *See appendix A for package 2N6990 14 PIN FLAT PACK* C for 2N6990 C above T C for 2N6989 and 2N6989U C above T 500 Vdc stg ing & Storage Junction Temperature Range 2N6989U 2N6990 (2) 20 PIN LEADLESS* 2N6989U (2) 2N6989 (2) mAdc Collector Current (3) 2N6989 Vdc Base Voltage (3) CBO Vdc Base Voltage Collector (3) Vdc ollector (3) 2N6989, 2N6990 JAN, SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit (4) ON CHARACTERISTICS - Current Transfer Ratio I = 10 Vdc C CE 50 I = 10 Vdc C CE 75 325 h FE I = 10 Vdc C CE 100 I = 10 Vdc 100 300 C C E I = 10 Vdc 30 C CE - Emitter Saturation Voltage 0.3 I V C B CE(sat) 1.0 I B Base - Emitter Saturation Voltage 0.6 1.2 I = 150 V C B BE(sat) 2.0 I B DYNAMIC CHARACTERISTICS Magnitude of Small - Signal Short - Circuit Forward Current Transfer Ratio 2.5 8.0 h I = 10 Vdc, f = 100 MHz C CE Forward Current T ransfer Ratio h 50 I = 10 Vdc, f = 1.0 kHz C CE Output Capacitance C 8.0 obo V = 0, 100 kHz 1.0 MHz E 25 C ibo V = 0, 100 kHz 1.0 MHz EB E (4) Pulse Test: Pulse Width = 300 2.0%. 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 s, Duty Cycle f = 0.5 Vdc, I pF Input Capacitance CB f = 10 Vdc, I pF = 1.0 mAdc, V fe = 20 mAdc, V fe C = 50 mAdc = 500 mAdc, I = 15 mAdc mAdc, I Vdc C = 50 mAdc = 500 mAdc, I = 15 mAdc = 150 mAdc, I Vdc Collector = 500 mAdc, V = 150 mAdc, V = 10 mAdc, V = 1.0 mAdc, V = 0.1 mAdc, V Forward

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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