7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N4240 APPLICATIONS: Off-Line Inverters Deflection Circuits Switching Regulators DC-DC Converters 5 Amp, 500V, Motor Controls High Voltage Amplifiers High Voltage FEATURES: High Voltage: 250 to 500V High Current: 2 Amps NPN Silicon Power Fast Switching: t < 3sec. Low V f CE (SAT) Transistors High Power: 35 Watts DESCRIPTION:DESCRIPTION: These power transistors are produced by PPC s DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature TO-66 range to 200C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. ABSOLUTE MAXIMUM RATINGS:ABSOLUTE MAXIMUM RATINGS: SYMBOL CHARACTERISTIC VALUE UNITS V * Collector-Base Voltage 500 Volts CBO V * Collector-Emitter Voltage 300 Volts CEO V * 400 Volts Collector-Emitter Voltage R = 50 CER BE V * Emitter-Base Voltage 6 Volts EBO I * Peak Collector Current 5 Amps C I * Continuous Collector Current 2 Amps C I * Base Current 1 Amps B T * Storage Temperature -65 to 200 C STG T * Operating Junction Temperature -65 to 200 C J * Lead Temperature 1/16 from Case for 10 Sec. 235 C P * Power Dissipation T T = 25C C 35 Watts JC Thermal Impedance 5.0 C/W * Indicates JEDEC registered data. MSC1058.PDF 05-19-992N4240 ELECTRICAL CHARACTERISTICS:ELECTRICAL CHARACTERISTICS: (25Case Temperature Unless Otherwise Noted) VALUE SYMBOL CHARACTERISTIC TEST CONDITIONS Units Min. Max. V Collector-Emitter I = 0.2 Amp (Notes and 2) 300 ---- Volts * C Sustaining Voltage V Collector-Emitter 400 ---- Volts I = 0.2A, R = 50 (Notes 1 and 2) CER(sus) C BE Sustaining Voltage I V = 450V, V = -1.5V ---- 2.0 mA. CEV* BE Collector Cutoff Current I * Collector Cutoff Current V = 300V, V = -1.5V ---- 5.0 mA. CEV BE T = 150C C I Collector Cutoff Current V = 150V, I = 0 ---- 5.0 mA. CEO* B I Emitter Cutoff Current V = 6V, I = 0 ---- 0.5 mA. EB0* C h * DC Forward Current I = 0.1A, V = 10V 40 ---- ---- FE C CE Transfer Ratio I = 0.75A, V = 10V 30 150 ---- C CE (Note 1) I = 0.75A, V = 2V 10 100 ---- C CE V * Collector-Emitter I = 0.75A, I = .075A ---- 1.0 Volts CE(sat) C B Saturation Voltage (Note 1) V * Base-Emitter Saturation I = 0.75A, I = .075A ---- 1.8 Volts BE(sat) C B Voltage (Note 1) I Second-Breakdown V = 100V, t = 1.0sec. 0.35 ---- A CE Collector Current (with base forward biased) E Second-Breakdown 50 ---- V = 4V, R = 20, L = 100h J EB BE Energy (with base reverse biased) h * Common-Emitter Small- V = 10V, I = 0.2A, f = 5 MHz 3 ---- ---- fe CE C Signal Forward Current Transfer Ratio I h I * Common-Emitter Small- V = 10V, I = 0.2A 3.0 ---- ---- fe CE C Signal Forward Current Transfer Ratio, f = 5 MHz C Collector-Base V = 10V, I = 0, f = 1.0MHz ---- 120 pf Ob CB E Capacitance tr* Rise Time I = .75A, I = .075A ---- .05 sec. C B2 ts* Storage Time I = .75A, I = I = .075A ---- 6.0 sec. C B1 B2 tf* Fall Time I = .75A, I = I = .075A ---- 3.0 sec. C B1 B2 Note 1: Pulse Test: Pulse width = 300Sec., Rep. Rate 60Hz. Note 2: Caution - Do not use Curve Tracer. * Indicates JEDEC registered data. MSC1058.PDF 05-19-99 S/b S/b EB CE CE CE CEO(sus)