TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/395 DEVICES LEVELS 2N3735 2N3735L JAN 2N3737 2N3737UB JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Min. Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage V 75 Vdc CBO Emitter-Base Voltage V 5 Vdc EBO TO-5* Collector Current I 1.5 Adc C 2N3735L 2N3735, 2N3735L 1.0 (1) W Total Power Dissipation 2N3737 P 0.5 (3) W T T = +25C A 2N3737UB 0.5 (5) W 2N3735, 2N3735L 2.9 (2) W Total Power Dissipation 2N3737 P 1.9 (4) W T TC = +25C 2N3737UB N/A W Operating & Storage Junction Temperature Range T , T -65 to +200 C J stg * Electrical characteristics for L suffix devices are identical to the non L corresponding devices. (1) Derate linearly at 5.71 mW/C above T = +25C A TO-39* (TO-205AD) (2) Derate linearly at 16.6 mW/C above T = +25C A 2N3735 (3) Derate linearly at 2.86 mW/C above T = +25C A (4) Derate linearly at 11.3 mW/C above T = +25C A (5) Derate linearly at 3.07 mW/C above T = +25C A (6) T = +55C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1 A layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2 mm), R with a defined thermal resistance condition included is measured at P = JA T 500mW. ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A 3 PIN 2N3737UB Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage V 40 Vdc (BR)CEO I = 10mAdc C Collector-Base Cutoff Current 10 Adc V = 75Vdc I CB CBO 250 Adc V = 30Vd CB TO-46 (TO-206AB) 2N3737 T4-LDS-0173 Rev. 1 (101069) Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector- Emitter Cutoff Current 200 nAdc V = 30Vdc, V = 2.0Vdc I CE EB CEX 250 Adc V = 30Vdc, V = 2.0Vdc TA = +150C CE EB Emitter-Base Cutoff Current 10 Adc V = 5.0Vdc I EB EBO 100 nAdc V = 4.0Vdc EB (1) ON CHARACTERISTICS Forward-Current Transfer Ratio I = 10mAdc, V = 1.0Vdc 35 C CE I = 150mAdc, V = 1.0Vdc 40 C CE h I = 500mAdc, V = 1.0Vdc 40 150 FE C CE I = 1.0Adc, V = 1.5Vdc 20 80 C CE I = 1.5Adc, V = 5.0Vdc 20 C CE Collector-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.2 C B I = 150mAdc, I = 15.0mAdc 0.3 C B V Vdc CE(sat) I = 500mAdc, I = 50.0mAdc 0.5 C B I = 1.0Adc, I = 100mAdc 0.9 C B Base-Emitter Saturation Voltage I = 10mAdc, I = 1.0mAdc 0.8 C B I = 150mAdc, I = 15.0mAdc 1.0 C B V Vdc BE(sat) I = 500mAdc, I = 50.0mAdc 1.2 C B I = 1.0Adc, I = 100mAdc 1.4 C B DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio h fe I = 50mAdc, V = 10Vdc, f = 100MHz 2.5 6.0 C CE Delay Response I = 1.0Adc, V = 2Vdc, I = 100mA t 8 C BE B2 s d V = 30Vdc CC Turn-Off Time t I = 1.0Adc, I = I = 100mAdc, V = 30Vdc 60 s off C B1 B2 CC Rise Time t 40 s r I = 1.0Adc, V = 2Vdc, V = 30Vdc C BE CC Output Capacitance C 9 pF obo V = 10Vdc, I = 0, 100 kHz f 1.0MHz CB E Input Capacitance C 80 pF V = 0.5Vdc, I = 0, 100 kHz f 1.0MHz ibo EB C (1) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0% T4-LDS-0173 Rev. 1 (101069) Page 2 of 5