Product Information

2N3501UB

2N3501UB electronic component of Microchip

Datasheet
Bipolar Transistors - BJT Small-Signal BJT

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 29.7054 ( AUD 32.68 Inc GST) ea
Line Total: AUD 29.7054 ( AUD 32.68 Inc GST)

291 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
291 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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2N3501UB
Microchip

1 : AUD 29.7054
500 : AUD 29.67
5000 : AUD 28.5377

     
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RoHS - XON
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Cnhts
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Mxhts
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2N3501UB Qualified Levels: RADIATION HARDENED JAN, JANTX, JANTXV compliant AND JANS NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DESCRIPTION This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for high- reliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as well as a low profile U4 surface mount. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages. Important: For the latest information, visit our website 2N3501UB MECHANICAL and PACKAGING CASE: Ceramic. TERMINALS: Gold plating over nickel under plate. MARKING: Part number, date code, manufacturers ID. TAPE & REEL option: Standard per EIA-418D. Consult factory for quantities. WEIGHT: < 0.04 Grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 2N3501 UB Reliability Level Surface Mount package JAN = JAN Level JANTX = JANTX Level JANTXV = JANTXV Level JANS = JANS Level Blank = Commercial JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition Common-base open-circuit output capacitance C obo I Collector cutoff current, base open CEO I Collector cutoff current, circuit between base and emitter CEX I Emitter cutoff current, collector open EBO h Common-emitter static forward current transfer ratio FE V Collector-emitter voltage, base open CEO V Collector-emitter voltage, emitter open CBO V Emitter-base voltage, collector open EBO T4-LDS-0276-3, Rev. 1 (121564) 2012 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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