MASWSS0157 GaAs SPDT Switch Rev. V4 DC - 2.5 GHz Features Functional Schematic Very Low DC Power Consumption: 100 W Low Insertion Loss: 0.5 dB Pin 8 GND GND RF2 B High Isolation: 25 dB up to 2 GHz Very High Intercept Point: 45 dBm IP 3 Nanosecond Switching Speed Lead-Free SOIC-8 Package 100% Matte Tin Plating over Copper Halogen-Free Green Mold Compound 260C Reflow Compatible RoHS* Compliant Version of the SW-239 Description RFC GND RF1 A The MASWSS0157 is a GaAs MMIC SPDT switch in Pin 1 a lead-free SOIC 8-lead surface mount plastic package. This device is ideally suited for use where low power consumption is required. Typical applications include transmit/receive Pin Configuration switching, switch matrices and switched filter banks in systems such as radio and cellular equipment, Pin No. Function PCM, GPS, fiber optic modules, and other battery powered radio equipment. 1 RF Common 2 Ground The MASWSS0157 is fabricated using a monolithic GaAs MMIC using a mature 1 micron process. The 3 RF Port 1 process features full chip passivation for increased performance and reliability. 4 Control A 5 Control B 1 Ordering Information 6 RF Port 2 7 Ground Part Number Package 8 Ground MASWSS0157 Bulk Packaging MASWSS0157TR 1000 piece reel MASWSS0157TR-3000 3000 piece reel MASWSS0157SMB Sample Test Board 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MASWSS0157 GaAs SPDT Switch Rev. V4 DC - 2.5 GHz 2 Electrical Specifications: T = 25C, Vc = 0 V / -5 V, Z = 50 A 0 Parameter Test Conditions Units Min. Typ. Max. DC - 0.1 GHz 0.4 DC - 0.5 GHz 0.4 Insertion Loss dB DC - 1.0 GHz 0.5 0.8 DC - 2.0 GHz 0.6 DC - 0.1 GHz 56 DC - 0.5 GHz 43 Isolation dB DC - 1.0 GHz 30 33 DC - 2.0 GHz 24 VSWR DC - 2.0 GHz Ratio 1.4:1 Trise, Tfall 10% to 90% RF, 90% to 10% RF ns 2 Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF ns 4 Transients In-Band mV 15 Input Power, 0.05 GHz 21 1 dB Compression Point dBm Input Power, 0.5 - 2.0 GHz 27 Measured Relative to Input Power (for two-tone input power up to +6 dBm) 2nd Order Intercept 0.05 GHz 55 dBm 0.5 - 2.0 GHz 68 Measured Relative to Input Power (for two-tone input power up to +6 dBm) 3rd Order Intercept 0.05 GHz 40 dBm 0.5 - 2.0 GHz 45 Control Current Vc = 5 V A 20 25 2. For positive voltage control, external DC blocking capacitors are required on all RF ports as well as the Ground ports which should be pulled up to the positive voltage control level. (Refer to Application Note M521 -Positive Voltage Control of GaAs MMIC Control Device). 3,4 5 Absolute Maximum Ratings Truth Table Condition of Switch Parameter Absolute Maximum Control Inputs RF Common to each RF Port Input Power A B RF1 RF2 0.05 GHz +27 dBm 0.5 - 2.0 GHz +34 dBm 1 0 On Off Control Voltage -8.5 V < Vc < +5 V 0 1 Off On Operating Temperature -40C to +85C 5. 0 = 0 V to -0.2 V, 1 = -5 V to -8 V Storage Temperature -65C to +150C 3. Exceeding any one or combination of these limits may cause permanent damage to this device. 4. M/A-COM does not recommend sustained operation near these survivability limits. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: