Product Information

LY62256SL-55LLI

LY62256SL-55LLI electronic component of Lyontek

Datasheet
SRAM, 256K, 32KX8, 2.7-5.5V, 28SOIC

Manufacturer: Lyontek
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 3.6997 ( AUD 4.07 Inc GST) ea
Line Total: AUD 3.6997 ( AUD 4.07 Inc GST)

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 22 Jul to Fri. 26 Jul

MOQ : 1
Multiples : 1
1 : AUD 3.6997
10 : AUD 3.2487
50 : AUD 3.1259
100 : AUD 3.0986
250 : AUD 2.8481
500 : AUD 2.7825

     
Manufacturer
Product Category
Memory Size
Access Time
Brand
Sram Memory Configuration
Supply Voltage Range
Memory Case Style
No. Of Pins
Operating Temperature Min
Operating Temperature Max
Rohs Phthalates Compliant
Msl
Svhc
Operating Temperature Range
Supply Voltage Max
Supply Voltage Min
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Notes:- Show Stocked Products With Similar Attributes.

LY62256 Rev. 2.9 32K X 8 BIT LOW POWER CMOS SRAM REVISION HISTORY Revision Description Issue Date Rev. 1.0. Initial Issue Jul.25.2004 Rev. 2.0. Revised Vcc Range(Vcc=4.5~5.5V => 2.7~5.5V) May.4.2005 Rev. 2.1. Revised ISB1 May.13.2005 Rev. 2.2 Adding PKG type : skinny P-DIP Aug.29.2005 Rev. 2.3 Revised VIH(min)=2.4V, VIL(max)=0.6V Feb.24.2006 Rev. 2.4 Revised VIH(min)=2.4V, VIL(max)=0.6V (VCC=2.7~3.6V) Jul.31.2006 VIH(min)=2.4V, VIL(max)=0.8V (VCC=4.5~5.5V) Rev. 2.5 Revised STSOP Package Outline Dimension Mar.26.2008 Rev. 2.6 Added SL grade Mar.30.2009 Added I /I values when T = 25 and T = 40 SB1 DR A A FEATURES ORDERING INFORMATION Revised & Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION Revised I SB1(MAX) Revised V to V and V TERM T1 T2 Revised Test Condition of I /I SB1 DR Deleted T in ABSOLUTE MAXIMUN RATINGS SOLDER Rev. 2.7 Dec.18.2009 Revised PACKAGE OUTLINE DIMENSION in page 8 & 9 Rev. 2.8 May.7.2010 Revised PACKAGE OUTLINE DIMENSION in page 10 Rev. 2.9 Aug.25.2010 ORDERING INFORMATION Revised in page 12 Revised PACKAGE OUTLINE DIMENSION in page 9 Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 0 LY62256 Rev. 2.9 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The LY62256 is a 262,144-bit low power CMOS Fast access time : 35/55/70ns static random access memory organized as 32,768 Low power consumption: words by 8 bits. It is fabricated using very high Operating current : 20/15/10mA (TYP.) performance, high reliability CMOS technology. Its Standby current : 1 A (TYP.) standby current is stable within the range of Single 2.7~5.5V power supply operating temperature. All inputs and outputs TTL compatible Fully static operation The LY62256 is well designed for low power Tri-state output application, and particularly well suited for battery Data retention voltage : 1.5V (MIN.) back-up nonvolatile memory application. Green package available Package : 28-pin 600 mil PDIP The LY62256 operates from a single power 28-pin 330 mil SOP supply of 2.7~5.5V and all inputs and outputs are 28-pin 8mm x 13.4mm STSOP fully TTL compatible 28-pin 300 mil Skinny P-DIP PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) 0 ~ 70 LY62256 2.7 ~ 5.5V 35/55/70ns 1A 20/15/10mA -20 ~ 80 LY62256(E) 2.7 ~ 5.5V 35/55/70ns 1A 20/15/10mA LY62256(I) -40 ~ 85 2.7 ~ 5.5V 35/55/70ns 1A 20/15/10mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A14 Address Inputs Vcc Vss DQ0 DQ7 Data Inputs/Outputs CE# Chip Enable Input 32Kx8 A0-A14 DECODER MEMORY ARRAY WE# Write Enable Input OE# Output Enable Input V Power Supply CC V Ground SS I/O DATA DQ0-DQ7 COLUMN I/O CIRCUIT CE# CONTROL WE# CIRCUIT OE# Lyontek Inc. reserves the rights to change the specifications and products without notice. 5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan. TEL: 886-3-6668838 FAX: 886-3-6668836 1

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

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