TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose ESD Protection - SP712 RoHS Pb GREEN SP712 Series 640W Asymmetrical TVS Diode Array Description The SP712 TVS Diode Array is designed to protect RS-485 applications with asymmetrical working voltages (-7V to 12V) from damage due to electrostatic discharge (ESD), electrical fast transients (EFT), and lightning induced surges. The SP712 can absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard without performance degradation and safely dissipate up to 20A of 8/20us induced surge current (IEC 61000-4-5) with very low clamping voltages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low clamping voltage 30kV contact, 30kV air Low leakage current 2 1 EFT, IEC 61000-4-4, 50A Halogen free, Lead free (5/50ns) and RoHS compliant Lightning, IEC 61000- Moisture Sensitivity nd 4-5 2 edition, 20A Level(MSL -1) (t =8/20s) 12V P 12V AEC-Q101 qualified Working Voltages: -7V to 7V 7V 12V Applications 3 RS-485 Security Systems Fieldbus Automated Teller Machines (ATMs) Modbus Lighting Control - DALI Profibus Communication DMX512 Equipments RS-485 Application Example RS-485 Port Receiver A B IC SP712SM712 GND Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/13/20 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose ESD Protection - SP712 Absolute Maximum Ratings Symbol Parameter Value Units 640 P Peak Pulse Power (t =8/20s) W Pk p 20 I Peak Pulse Current (t =8/20s) A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units I =1A, Pin 3 to Pin 1 or Pin 2 7.0 V R Reverse Standoff Voltage V RWM I =1A, Pin 1 or Pin 2 to Pin 3 12.0 V R I =1mA, Pin 3 to Pin 1 or Pin 2 7.5 9 V R Breakdown Voltage V BR I =1mA, Pin 1 or Pin 2 to Pin 3 13.3 14.5 V R V =7V 20 A Reverse Leakage R I LEAK Current V =12V 1 A R I =1A, t =8/20s, Pin 1 or Pin 2 to Pin 3 17 19 V PP p I =1A, t =8/20s, Pin 3 to Pin 1 or Pin 2 10 11 V PP p 1 Clamp Voltage V C I =20A, t =8/20s, Pin 1 or Pin 2 to Pin 3 28 32 V PP p I =20A, t =8/20s, Pin 3 to Pin 1 or Pin 2 17 20 V PP p 2 Dynamic Resistance R TLP, t =100ns 0.26 DYN P IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV Reverse Bias=0V, f=1MHz 1 Diode Capacitance C 75 pF I/O-GND Pin 1 or Pin 2 to Pin 3 Notes : 1. Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=90ns Capacitance vs. Reverse Bias Clamping Voltage vs. I PP 80 35.0 70 30.0 Pin 1 or Pin 2 to Pin 3 60 25.0 50 20.0 40 15.0 30 10.0 Pin3 to Pin1 or Pin2 20 5.0 10 0.0 0 0.05.0 10.015.0 20.0 02468 10 12 Peak Pulse Current-I (A) PP Bias Voltage (V) 20 20 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 01/13/20 Capacitance (pF) Clamp Voltage-V (V) C