TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP3384NUTG Low Capacitance ESD Protection - SP3420-04UTG RoHS Pb GREEN SP3420, 0.32pF, 6A Diode Array Description The SP3420 includes four channel ultra low capacitance and high-level ESD protection diodes to protect high-speed data rate such as USB 3.1, DisplayPort, Thunderbolt, and e-SATA. The typical capacitance of 0.32pF helps ensure signal integrity and this robust device can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, 8kV contact discharge) without performance degradation safely nd dissipate 6A of 8/20s surge current (IEC 61000-4-5 2 edition). 12 4 3 2 1 G Pinout Features 3 ESD, IEC 61000-4-2, Low operating and 12kV contact, 15kV air clamping voltage EFT, IEC 61000-4-4, 40A AEC-Q101 qualified 1 2 3.G 4 5 3 2 G 1 (5/50ns) Halogen free, Lead free Lightning, IEC 61000- and RoHS compliant 4-5 2nd edition, 6A Moisture Sensitivity Level (t =8/20s) P (MSL -1) 4 5 6 10 9 8.G 7 6 Low capacitance of 0.32pF 1.5V (TYP) 1 2 1 2 3 4 Bottom View Low leakage current of 0.02A (TYP) at 3.3V 3 G 0802 DFN array Functional Block Diagr0402 DFN arraam y Applications Ultra-high speed data LVDS interfaces lines 1 2 4 5 Consumer, mobile and 1 2 3 4 5 6 USB 3.1, 3.0, 2.0 portable electronics DisplayPort(TM) Tablet PC and external storage with high speed Thunderbolt (Light Peak) interfaces V-by-One G G, 3, 8 1004 DFN array 1103 DFN array Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 07/16/19 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) Lightning Surge Protection- SP3384NUTG Low Capacitance ESD Protection - SP3420-04UTG Absolute Maximum Ratings Symbol Parameter Value Units I Peak Current (t =8/20s) 6 A PP p T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I = 1A 3.3 V RWM R Breakdown Voltage V I = 1mA 6.5 8.5 V BR R Reverse Leakage Current I V =3.3V 0.02 0.1 A LEAK R Holding Voltage V I/O to GND 1.7 V HOLD I =1A, t =8/20s 2.7 3.5 V PP p 1 Clamp Voltage V C I =6A, t =8/20s 4 6 V PP p 2 Dynamic Resistance R TLP, t =100ns 0.3 DYN p IEC 61000-4-2 (Contact Discharge) 12 kV 1,3 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 15 kV 1 Diode Capacitance C Reverse Bias=1.5V, f=1MHz 0.32 0.35 pF I/O-GND Notes: 1Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP) test setting : Std.TDR(50),tp=100ns, tr=0.2ns ITLP and VTLP averaging window: start t1=70ns to end t2=90ns 3 Device stressed with ten non-repetitive ESD pulses. 8/20s Pulse Waveform Capacitance vs. Reverse Bias 110% 0.5 100% 90% 0.4 80% 70% 0.3 60% 50% 0.2 40% 30% 0.1 20% 0.0 10% 0.00.3 0.60.9 1.21.5 1.82.1 2.42.7 3.03.3 0% Bias Voltage (V) 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (s) 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 07/16/19 Percent of I PP Capacitance (pF)