Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs RoHS Description This new sensitive SCR component series offers 600V V and DRM 0.8A I capability in the smallest package size in the industry, T(RMS) SOT23. It is specifically designed for GFCI (Ground Fault Circuit Interrupter) applications. All SCRs junctions are glass-passivated to ensure long term reliability and parametric stability. Features Very compact SOT23 SMT High dv/dt noise immunity package Improved turn-off time (t ) < q Surge current capability up to 25 sec 12A 60Hz Sensitive gate for direct Blocking voltage microprocessor interface ( V / V ) DRM RRM RoHS compliant and Halogen- capability - up to 600V Main Features Free Symbol Value Unit I 0.8 A T(RMS) Applications V /V 600 V DRM RRM The SxX8BBS series is specifically designed for GFCI (Ground I 200 A GT Fault Circuit Interrupter) and applications. Schematic Symbol Pin out Anode GG 3 KK AA 1 2 Cathode Gate Absolute Maximum Ratings Symbol Parameter Value Unit V / V Peak non-repetitive blocking voltage Pw=100s 700 V DSM RSM I RMS on-state current (full sine wave) T = 80C 0.8 A T(RMS) C I Average on-state current T = 80C 0.51 A T(AV) C f= 50Hz 10 A Non repetitive surge peak on-state current I TSM (Single cycle, T initial = 25C) J f= 60Hz 12 A 2 t = 10 ms f= 50 Hz 0.5 A s p 2 2 I t I t Value for fusing 2 t = 8.3 ms f= 60 Hz 0.6 A s p di/dt Critical rate of rise of on-state current I = 10mA 60 Hz T = 125C 80 A/s G J I Peak Gate Current t = 20 s T = 125C 1.0 A GM p J P Average gate power dissipation T = 125C 0.1 W G(AV) J T Storage junction temperature range -40 to 150 C stg T Operating junction temperature range -40 to 125 C J 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 08/03/21Thyristors Datasheet SxX8BBS Series EV Series 0.8 Amp Sensitive SCRs Electrical Characteristics (T = 25C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit MIN. 50 A I DC Gate Trigger Current V = 6V, R = 100 GT D L MAX. 200 A V DC Gate Trigger Voltage V = 6V, R = 100 MAX. 0.8 V GT D L V Peak Reverse Gate Voltage I = 10A MIN. 8 V GRM RG I Holding Current Initial Current = 20mA MAX. 10 mA H T = 125C J Critical Rate-of-Rise of (dv/dt)s V = 67%V /V MIN. 50 V/s D DRM RRM Off-State Voltage Exp. Waveform, R =1 k GK V = V , R =1 k D DRM GK V Gate Non-Trigger Voltage MIN. 0.2 V GD T = 125C J t Turn-Off Time I =0.5A MAX. 25 s q T I =10mA,Pw= 15sec, G t Turn-On Time TYP. 2.0 s gt I = 1.6A(pk) T Static Characteristics (T = 25C, unless otherwise specified) J Symbol Description Test Conditions Limit Value Unit V Peak On-State Voltage I = 1.6A (pk) MAX. 1.70 V TM TM T = 25C MAX. 5 A J I /I V /V DRM RRM DRM RRM T = 125C MAX. 100 A J Thermal Resistances Symbol Description Value Unit R Junction to case (AC) 45 C/W (JC) R Junction to ambient 220 C/W (J-A) Figure 1: Figure 2: Normalized DC Gate Trigger Current vs. Normalized DC Holding Current vs. Junction Temperature Junction Temperature 3.00 1.8 1.6 2.50 1.4 2.00 1.2 1 1.50 0.8 1.00 0.6 0.4 0.50 0.2 0.00 0 -40-15 10 35 60 85 110135 -40-15 10 35 60 85 110135 Junction Temperature (T ) - C Junction Temperature (T ) - C J J 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 08/03/21 I GT Ratio of I (T = 25C) GT J I H Ratio of I (T = 25C) H J