Power Module 600V 300A IGBT Module RoHS MG06300D-BN4MM Features High short circuit Free wheeling diodes capability, self limiting with fast and soft reverse short circuit current recovery V with positive Low switching losses CE(sat) temperature coefficient Fast switching and short tail current Applications Agency Approvals High frequency Motion/servo control AGENCY AGENCY FILE NUMBER switching application UPS systems E71639 Medical applications Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T max Max. Junction Temperature 175 C J T Operating Temperature -40 150 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 320 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T=25C 600 V CES J V Gate - Emitter Voltage 20 V GES T =25C 400 A C I DC Collector Current C T =70C 300 A C I Repetitive Peak Collector Current t =1ms 600 A CM p P Power Dissipation Per IGBT 940 W tot Diode V Repetitive Reverse Voltage T=25C 600 V RRM J T =25C 400 A C I Average Forward Current F(AV) T =70C 300 A C I Repetitive Peak Forward Current t =1ms 600 A FRM p 2 2 I t T =125C, t=10ms, V =0V 8000 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG06300D-BN4MM 1 2016 Littelfuse, Inc 164 Specifications are subject to change without notice. Revised:07/21/16Power Module 600V 300A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =4.8mA 4.9 5.8 6.5 V GE(th) CE GE C I =300A, V =15V, T=25C 1.45 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =300A, V =15V, T=125C 1.6 V C GE J V =600V, V =0V, T=25C 1 mA CE GE J I Collector Leakage Current CES V =600V, V =0V, T=125C 5 mA CE GE J I Gate Leakage Current V =0V,V =15V, T=125C -400 400 nA GES CE GE J R Integrated Gate Resistor 1 Gint Q Gate Charge V =300V, I =300A , V =15V 3.2 C ge CC C GE C Input Capacitance 19 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.57 nF res T =25C 110 ns J t Turn - on Delay Time d(on) T =125C 120 ns J T =25C 50 ns J V =300V t Rise Time CC r T =125C 60 ns J I =300A T =25C 490 ns C J t Turn - off Delay Time d(off) T =125C 520 ns J R =2.4 G T =25C 60 ns J t Fall Time f T =125C 70 ns V =15V J GE T =25C 2.0 mJ J E Turn - on Energy Inductive Load on T =125C 3.1 mJ J T =25C 9 mJ J E Turn - off Energy off T =125C 12 mJ J I Short Circuit Current t 6S , V =15V T =125C,V =360V 1500 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.16 K/W thJC Diode I =300A , V =0V, T =25C 1.55 V F GE J V Forward Voltage F I =300A , V =0V, T =125C 1.5 V F GE J I Max. Reverse Recovery Current 235 A RRM I =300A , V =300V F R Q Reverse Recovery Charge di /dt=-6500A/s 24 C rr F T =125C E Reverse Recovery Energy J 6.2 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.32 K/W thJCD MG06300D-BN4MM 2016 Littelfuse, Inc 2 165 Specifications are subject to change without notice. Revised:07/21/16