1. The 2N6399TG is an N-channel discrete-level FET (field-effect transistor) produced by the Littelfuse Company. It is designed for use in high-temperature, high-voltage, medium-power switching applications. This component is able to handle voltage up to 300 V and a maximum current of 10 mA.
2. The 2N6399TG is characterized by an on-state resistance of 0.3 Ohms and a threshold voltage of 2.0–3.0 V. This component has a low gate-source capacitance of only 0.7 pF at 2.5 V. It also features a drain-source breakdown voltage of 350 V.