Product Information

MMBT3906LT1

MMBT3906LT1 electronic component of LGE

Datasheet
Transistors (NPN/PNP) SOT-23 RoHS

Manufacturer: LGE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

50: AUD 0.0241 ( AUD 0.03 Inc GST) ea
Line Total: AUD 1.205 ( AUD 1.33 Inc GST)

13634 - Global Stock
Ships to you between
Mon. 29 Jul to Thu. 01 Aug
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
12919 - Global Stock


Ships to you between
Mon. 29 Jul to Thu. 01 Aug

MOQ : 50
Multiples : 50
50 : AUD 0.0266
500 : AUD 0.0214
3000 : AUD 0.017
6000 : AUD 0.0154
24000 : AUD 0.0139
51000 : AUD 0.0133

     
Manufacturer
Product Category
Brand
Rohs
Package
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
Collector Cut-Off Current Icbo
Collector-Emitter Breakdown Voltage Vceo
Power Dissipation Pd
Collector Current Ic
Dc Current Gain Hfe@Ic Vce
Transition Frequency Ft
Collector-Emitter Saturation Voltage Vcesat@Ic Ib
Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

The MMBT3906LT1 is a type of NPN (negative-positive-negative) bipolar transistor manufactured by LGE in a SOT-23 surface mount package and is designed specifically for high-speed switching applications. It features a low collector-emitter saturation voltage (Vce(sat)) of 0.3 V, which helps reduce power consumption in various applications. This transistor is also RoHS compliant, meaning that lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated diphenyl ethers are not used in the manufacturing process, making it safe and effective in accordance with regulations. It is suitable for applications such as line regulation, audio amplifiers, power switching, high current gain and general-purpose switching.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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