WP3DPD1C Photodiode DESCRIPTION PACKAGE DIMENSIONS z Made with PIN silicon phototransistor chips FEATURES z Mechanically and spectrally matched to the infrared emitting LED lamp z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Power Dissipation 150 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C 1 Lead Solder Temperature 260C For 3 Seconds 2 Lead Solder Temperature 260C For 5 Seconds Notes: 1. 2mm below package base. 2. 5mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAF7367 / 1101016981 Rev No: V.3 Date: 08/10/2018 WP3DPD1C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100uA R Reverse Break down Voltage V 33 170 - V 2 (BR)R H = 0mW/cm V = 10V R Reverse Dark Current ID - - 10 nA (R) 2 H = 0mW/cm = 940nm Open Circuit Voltage V - 390 - mV OC 2 H = 5mW/cm Rise Time T - 6 - nS R V = 10V R = 940nm R = 1000 L Fall Time T - 6 - nS F V = 5V R 2 Light current I 0.07 0.16 - uA Ee = 0.08mW/cm S = 940nm V = 10V R Total Capacitance C - 5 - pF F = 1MHZ T 2 H = 0mW/cm Range of spectral bandwidth 420 - 1120 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p Angle of half sensitivity 2 1/2 - 50 - deg - TECHNICALDATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 0 -15 15 100% T = 25 C a T = 25 C -30 30 a 80% -45 45 60% 60 -60 40% 20% -75 75 0% 90 350 450 550 650 750 850 950 1050 1150 -90 1.0 0.5 0.0 0.5 1.0 Wavelength (nm) PHOTODIODE Light Current vs. Power Dissipation vs. Dark Current vs. Dark Current vs. Irradiance Ambient Temperature Reverse Voltage Ambient Temperature 100 200 10 1000 VCE = 20V V =5V R T = 25 C a Ee = 0 T = 25 C a 10 150 100 1 1 100 10 0.1 0.1 50 1 0.01 0 0.01 0.1 1 10 100 1000 10000 0 20406080 100 0 5 10 15 20 25 30 0 25 50 75 100 2 Ambient temperature (C) Ambient temperature (C) Irradiance Ee (W/cm ) Reverse voltage V (V) R Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAF7367 / 1101016981 Rev No: V.3 Date: 08/10/2018 Relative spectral sensitivity (a. u.) Light current Is (A) Power dissipation Pd (mW ) Dark current (nA) Relative sensitivity Dark current (nA)