L-93DP3C

PHOTOTRANSISTOR Part Number: L-93DP3C Description Features Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Water clear lens. z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. SPEC NO: DSAC1289 REV NO: V.3 DATE: MAY/12/2009 PAGE: 1 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Ting.Li ERP:1101008735 Electrical / Optical Characteristics at TA=25C Symbol Parameter Min. Typ. Max. Units Test Conditions IC=100uA VBR CEO Collector-to-Emitter Breakdown Voltage 30 V Ee=0mW/c IE=100uA VBR ECO Emitter-to-Collector Breakdown Voltage 5 V Ee=0mW/c IC=2mA VCE (SAT) Collector-to-Emitter Saturation Voltage 0.8 V Ee=20mW/c VCE=10V I CEO Collector Dark Current 100 nA Ee=0mW/c TR Rise Time (10 to 90 ) 15 us VCE = 5V IC=1mA TF 15 us RL=1000 Fall Time (90 to 10 ) VCE = 5V I (ON) On State Collector Current 0.2 0.6 mA Ee=1mW/c =940nm Absolute Maximum Ratings at TA=25C Parameter Max.Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25C Free Air Temperature 100mW Operating Temperature -40C To +85C Storage Temperature -40C To +85C Lead Soldering Temperature (>5mm for 5sec) 260C SPEC NO: DSAC1289 REV NO: V.3 DATE: MAY/12/2009 PAGE: 2 OF 3 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Ting.Li ERP:1101008735