APT2012F3C 2.0 x 1.25 mm Infrared Emitting Diode DESCRIPTION PACKAGE DIMENSIONS F3 Made with Gallium Arsenide Infrared Emitting diodes FEATURES 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Mechanically and spectrally matched to the phototransistor Package: 2000 pcs / reel Moisture sensitivity level: 3 Halogen-free RoHS compliant APPLICATIONS Infrared Illumination for cameras Machine vision systems Surveillance systems Industrial electronics IR data transmission Remote control RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.1(0.004 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SELECTION GUIDE 2 1 Po (mW/sr) 20mA Viewing Angle Emitting Color Part Number Lens Type (Material) Min. Typ. 21/2 1.2 3 APT2012F3C Infrared (GaAs) Water Clear 160 *0.8 *2 Notes: 1. 1/2 is the angle from optical centerline where the luminous intensity is 1/2 of the optical peak value. 2. Radiant Intensity / luminous flux: +/-15%. * Radiant intensity value is traceable to CIE127-2007 standards. Page 1 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAA9557 / 1203001799 Rev No: V.13A Date: 01/07/2021 APT2012F3C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Value Parameter Symbol Emitting Color Unit Typ. Max. Wavelength at Peak Emission I = 20mA Infrared 940 - nm F peak Spectral Bandwidth at 50% REL MAX Infrared 50 - nm I = 20mA F Capacitance C Infrared 90 - pF 1 Forward Voltage I = 20mA V Infrared 1.2 1.6 V F F Reverse Current (V = 5V) I Infrared - 10 A R R Temperature Coefficient of Wavelength TC Infrared 0.3 - nm/C I = 20mA, -10C T 85C F Temperature Coefficient of V F TC Infrared -1.2 - mV/C V I = 20mA, -10C T 85C F Notes: 1. Forward voltage: 0.1V. 2. Wavelength value is traceable to CIE127-2007 standards. 3. Excess driving current and / or operating temperature higher than recommended conditions may result in severe light degradation or premature failure. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Symbol Value Unit Power Dissipation P 90 mW D Reverse Voltage V 5 V R Junction Temperature T 115 C j Operating Temperature T -40 to +85 C op Storage Temperature T -40 to +85 C stg DC Forward Current I 50 mA F 1 Peak Forward Current I 1200 mA FM Electrostatic Discharge Threshold (HBM) 8000 V - 2 Thermal Resistance (Junction / Ambient) R 370 C/W th JA 2 Thermal Resistance (Junction / Solder point) R 210 C/W th JS Notes: 1. 1/100 Duty Cycle, 10s Pulse Width. 2 2. R ,R Results from mounting on PC board FR4 (pad size 16 mm per pad). th JA th JS 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 2 / 4 2021 Kingbright. All Rights Reserved. Spec No: DSAA9557 / 1203001799 Rev No: V.13A Date: 01/07/2021