3. 0mmx1.0mm RIGHT ANGLE PHOTOTRANSISTOR Part Number: APA3010P3C Features Description z MECHANICALLY AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips. THE APA3010 SERIES INFRARED EMITTING LED LAMP. z WATER CLEAR LENS. z PACKAGE : 2000PCS / REEL. z MOISTURE SENSITIVITY LEVEL : LEVEL 3. z RoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.15(0.006 ) unless otherwise noted. 3. Specifications are subject to change without notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. SPEC NO: DSAF0196 REV NO: V.2 DATE: FEB/23/2007 PAGE: 1 OF 5 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Y.L.LI ERP:1203000589 Electrical / Optical Characteristics at TA=25C Symbol Parameter Min. Typ. Max. Units Test Conditions IC=100uA VBR CEO Collector-to-Emitter Breakdown Voltage 30 - - V 2 Ee=0mW/cm IE=100uA VBR ECO Emitter-to-Collector Breakdown Voltage 5 - - V 2 Ee=0mW/cm IC=2mA VCE (SAT) Collector-to-Emitter Saturation Voltage - - 0.8 V 2 Ee=20mW/cm VCE=10V I CEO Collector Dark Current - - 100 nA 2 Ee=0mW/cm TR Rise Time (10 to 90 ) - 15 - us VCE = 5V IC=1mA RL=1000 TF Fall Time (90 to 10 ) - 15 - us VCE = 5V, 2 I (ON) On State Collector Current 0.1 0.3 - mA Ee=1mW/cm , =940nm 2 1/2 Viewing Angle - 120 - deg - Absolute Maximum Ratings at TA=25C Parameter Max.Ratings Collector-to-Emitter Breakdown Voltage 30V Emitter-to-Collector Breakdown Voltage 5V Power Dissipation at (or below) 25C Free Air Temperature 100mW Operating Temperature Range -40C ~ +85C Storage Temperature Range -40C ~ +85C SPEC NO: DSAF0196 REV NO: V.2 DATE: FEB/23/2007 PAGE: 2 OF 5 APPROVED: J. Lu CHECKED: Allen Liu DRAWN: Y.L.LI ERP:1203000589