Product Information

IS62WV102416EBLL-45BLI

IS62WV102416EBLL-45BLI electronic component of ISSI

Datasheet
ISSI SRAM 16Mb Low PwrPwr Svr Async 1Mx16 45ns

Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 15.9408 ( AUD 17.53 Inc GST) ea
Line Total: AUD 15.9408 ( AUD 17.53 Inc GST)

16438 - Global Stock
Ships to you between
Wed. 17 Jul to Fri. 19 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
329 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 1
Multiples : 1
1 : AUD 20.07
10 : AUD 18.608
25 : AUD 15.652
100 : AUD 14.984
250 : AUD 14.666
480 : AUD 14.108
960 : AUD 13.586

16438 - Global Stock


Ships to you between Wed. 17 Jul to Fri. 19 Jul

MOQ : 1
Multiples : 1
1 : AUD 15.9408
10 : AUD 15.0031
25 : AUD 13.1985
100 : AUD 12.5438
250 : AUD 12.42
480 : AUD 12.42
960 : AUD 12.42
2880 : AUD 12.3138
5280 : AUD 11.9423

329 - Global Stock


Ships to you between Thu. 11 Jul to Wed. 17 Jul

MOQ : 1
Multiples : 1
1 : AUD 20.07
10 : AUD 18.608
25 : AUD 15.652
100 : AUD 14.984
250 : AUD 14.666
480 : AUD 14.108
960 : AUD 13.586

     
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Notes:- Show Stocked Products With Similar Attributes.

IS62/65WV102416EALL IS62/65WV102416EBLL FEBRUARY 2016 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES DESCRIPTION High-speed access time: 45ns, 55ns The IS62WV102416EALL/BLL and CMOS low power operation IS65WV102416EALL/BLL are Low Power, 16M bit Operating (typical): static RAMs organized as 1024K words by 16bits. It is - 10.8mW (1.8V), 18mW (3.0V) fabricated using s high-performance CMOS CMOS Standby (typical): technology. This highly reliable process coupled with - 48 W (1.8V), 90 W (3.0V) innovative circuit design techniques, yields high- TTL compatible interface levels performance and low power consumption devices. Single power supply When is HIGH (deselected) or when CS2 is low 1.65V1.98V Vdd (62/65WV102416EALL) (deselected) or when is low , CS2 is high and both 2.2V--3.6V Vdd (62/65WV102416EBLL) and are HIGH, the device assumes a standby Data control for upper and lower bytes mode at which the power dissipation can be reduced Industrial and Automotive temperature support down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable controls both writing and reading of the memory. A data byte allows Upper Byte and Lower Byte ( access. The IS62WV102416EALL/BLL and IS65WV102416EALL/BLL are packaged in the JEDEC standard 48-pin BGA (6mm x 8mm). BLOCK DIAGRAM Copyright 2016 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized b.) the user assume all such risks and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc.- www.issi.com 1 Rev. A1 2/22/2016 IS62/65WV102416EALL IS62/65WV102416EBLL PIN CONFIGURATIONS 48-PIN BGA 1 2 3 4 5 6 A0 A1 A2 CS2 A B I/O8 A3 A4 I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 GND I/O11 A17 A7 I/O3 VDD D VDD I/O12 NC A16 I/O4 GND E I/O14 I/O13 A14 A15 I/O5 I/O6 F I/O15 A19 A12 A13 I/O7 G A18 A8 A9 A10 A11 NC H PIN DESCRIPTIONS 2 CS OPTION A0-A19 Address Inputs I/O0-I/O15 Data Inputs/Outputs , CS2 Chip Enable Inputs Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) NC No Connection VDD Power GND Ground Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A1 2/22/2016

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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