Product Technical OrOrdderer Folder Support NowNow InterFET IFN152 IFN152 N-Channel JFET Features TO-18 Bottom View InterFET N0132L Geometry Low Noise: 1.0 nV/Hz Typical Gate/Case 3 High Gain: 30mS Typical Drain 2 RoHS Compliant SMT, TH, and Bare Die Package options. Source 1 Applications Low-Noise, High Gain SOT23 Top View Replacement for Japanese 2SK152 Source 1 Description Gate 3 The -20V InterFET IFN152 is a low noise high gain replacement for the Japanese 2SK152 JFET. Gate Drain 2 leakages are typically less than 50pA at room temperatures. The TO-18 package is hermetically sealed and suitable for military applications. TO-92 Bottom View Gate 3 Drain 2 Source 1 Product Summary Parameters IFN152 Min Unit BVGSS Gate to Source Breakdown Voltage -20 V I Drain to Source Saturation Current 5 mA DSS V Gate to Source Cutoff Voltage -0.5 V GS(off) GFS Forward Transconductance 30 (typ) mS Ordering Information Custom Part and Binning Options Available Part Number Description Case Packaging IFN152 Through-Hole TO-18 Bulk PN152 Through-Hole TO-92 Bulk SMP152 Surface Mount SOT23 Bulk 7 Tape and Reel: Max 3,000 Pieces Minimum 1,000 Pieces SMP152TR 13 Tape and Reel: Max 9,000 Pieces SOT23 Tape and Reel IFN152COT Chip Orientated Tray (COT Waffle Pack) COT 400/Waffle Pack IFN152CFT Chip Face-up Tray (CFT Waffle Pack) CFT 400/Waffle Pack Disclaimer: It is the Buyers responsibility for designing, validating and testing the end application under all field use cases and extreme use conditions. Guaranteeing the application meets required standards, regulatory compliance, and all safety and security requirements is the responsibility of the Buyer. These resources are subject to change without notice. IF35057.R00Product Technical OrOrdderer Folder Support NowNow InterFET IFN152 Electrical Characteristics Maximum Ratings ( TA = 25C, Unless otherwise specified) Parameters Value Unit VRGS Reverse Gate Source and Gate Drain Voltage -20 V I Continuous Forward Gate Current 10 mA FG P Continuous Device Power Dissipation 300 mW D P Power Derating 2.8 mW/C T Operating Junction Temperature -55 to 125 C J T Storage Temperature -65 to 150 C STG Static Characteristics ( TA = 25C, Unless otherwise specified) IFN152 Parameters Conditions Min Max Unit Gate to Source V(BR)GSS VDS = 0V, IG = -1A -20 V Breakdown Voltage Gate to Source IGSS VGS = -10V, VDS = 0V 1 nA Reverse Current Gate to Source VGS(OFF) VDS = -10V, ID = 100nA -0.5 -2 V Cutoff Voltage Drain to Source V = 0V, V = -10V GS DS IDSS 5 20 mA Saturation Current (Pulsed) Dynamic Characteristics ( TA = 25C, Unless otherwise specified) IFN152 Parameters Conditions Typ Unit Forward GFS VDS = -10V, VGS = 0V, f = 1kHz 30 mS Transconductance Ciss Input Capacitance VDS = -10V, VGS = 0V, f = 1MHz 15 pF Reverse Transfer C V = 10V, I = 0A, f = 1MHz 4 pF rss DS D Capacitance IFN152 2 of 5 InterFET Corporation Document Number: IF35057.R00 www.InterFET.com December, 2018