Product Information

TD92N16KOF

TD92N16KOF electronic component of Infineon

Datasheet
Module; double series; 1.6kV; 92A; BG-PB20-1; Ufmax:1.62V; screw

Manufacturer: Infineon
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Price (AUD)

1: AUD 208.369 ( AUD 229.21 Inc GST) ea
Line Total: AUD 208.369 ( AUD 229.21 Inc GST)

30 - Global Stock
Ships to you between
Thu. 18 Jul to Mon. 22 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
19 - Global Stock


Ships to you between Thu. 18 Jul to Mon. 22 Jul

MOQ : 1
Multiples : 1

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TD92N16KOF
Infineon

1 : AUD 201.9577
10 : AUD 188.8654
30 : AUD 188.8654
60 : AUD 184.8669

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Mounting Style
Hts Code
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

Datenblatt / Data sheet N Netz-Thyristor-Modul TT92N Phase Control Thyristor Module TT92N TD92N DT92N TT92N..K..-K TD92N..K..-A NT92N Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1200 1400 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM 1600 V repetitive peak forward off-state and reverse voltages 1200 1400 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 1600 V non-repetitive peak forward off-state voltage 1300 1500 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 1700 V non-repetitive peak reverse voltage 160 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 92 A Dauergrenzstrom T = 85C I C TAVM 104 A average on-state current T = 76C C 2050 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 1800 A surge current T = T , t = 10 ms vj vj max P 21000 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 16200 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 f = 50 Hz, 150 A/s Kritische Stromsteilheit (di /dt) T cr i = 0,6 A, di /dt = 0,6 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 1000 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 300 A v max. 1,62 V vj vj max T T on-state voltage Schleusenspannung T = T V 0,85 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 2,15 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 120 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 1,4 V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 5,0 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 2,5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,2 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 200 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 620 mA vj D GK L latching current i = 0,6 A, di /dt = 0,6 A/s, GM G t = 20 s g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 25 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 T = 25 C, t max. 3 s vj gd gate controlled delay time i = 0,6 A, di /dt = 0,6 A/s GM G prepared by: C.Drilling date of publication: 09.07.02 approved by: J. Novotny revision: 3 BIP AC/ 27.05.2002, C. Drilling A8/02 Seite/page 1/12Datenblatt / Data sheet N Netz-Thyristor-Modul TT92N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 150 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,0 ThermThermische Eigische Eigenschaften / Thermaenschl properties aften Innerer Wrmewiderstand pro Modul / per Module, = 180 sin R max. 0,185 C/W thJC pro Zweig / per arm, = 180 sin max. 0,370 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,175 C/W pro Zweig / per arm, DC max. 0,350 C/W pro Modul / per Module max. 0,05 C/W bergangs-Wrmewiderstand R thCH pro Zweig / per arm max. 0,10 C/W thermal resistance, case to heatsink 130 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+130 C c op operating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 4 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 4 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 160 g weight Kriechstrecke 12,5 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AC/ 27.05.2002, C. Drilling A8/02 Seite/page 2/12

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