Technische Information / technical information Net z-Thyristor-Modul TT190N16SOF Phase Control Thyristor Module Key Parameters V / V 1600 V DRM RRM I 190 A (T =85 C) TAVM C I 5200 A TSM 3570A (T =55C) C V 0,85 V T0 r 0,9 m T R 0,145 K/W thJC Base plate 34 mm Weight 165 g For type designation please refer to actual short form catalog Technische Information / technical information Netz-Thyristor-Modul TT190N16SOF Phase Control Thyristor Module TT190N16SOF TD190N16SOF Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 1600 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM repetitive peak forward off-state and reverse voltages 1600 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM non-repetitive peak forward off-state voltage 1700 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert I 275 A TRMSM maximum RMS on-state current Dauergrenzstrom I 190 A T = 85C TAVM C average on-state current Stostrom-Grenzwert T = 25C, t = 10ms I 5200 A vj P TSM surge current T = T , t = 10ms 4500 A vj vj max P 135200 Grenzlastintegral Tvj = 25C, tP = 10ms It As 101250 It-value T = T , t = 10ms As vj vj max P Kritische Stromsteilheit DIN IEC 747-6 (di /dt) 100 A/s T cr critical rate of rise of on-state current f = 50Hz, i = 1A, di /dt = 1A/s GM G 1000 Kritische Spannungssteilheit Tvj = Tvj max, vD = 0,67 VDRM (dvD/dt)cr V/s th critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values max. 1,52 V Durchlaspannung T = T , i = 500 A v vj vj max T T on-state voltage max. 0,85 V Schleusenspannung Tvj = Tvj max V(TO) threshold voltage max. 0,9 m Ersatzwiderstand T = T r vj vj max T slope resistance max. Zndstrom T = 25C, v = 12V I 145 mA vj D GT gate trigger current max. Zndspannung Tvj = 25C, vD = 12V VGT 2,5 V gate trigger voltage max. Nicht zndender Steuerstrom T = T , v = 12V I 10 mA vj vj max D GD max. gate non-trigger current Tvj = Tvj max , vD = 0,5 VDRM 5 mA Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom Tvj = 25C, vD = 12V, RA = 1 IH max. 200 mA holding current Einraststrom T = 25C, v = 12V, R 10 I max. 400 mA vj D GK L latching current iGM = 1A, diG/dt = 1A/s, tg = 20s Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 9 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 t max. 2 s gd gate controlled delay time T = 25C, i = 1A, di /dt = 1A/s vj GM G prepared by: AG Date of publication: 2016-05-19 approved by: MS Revision: 3.1 Date of Publication 2016-05-19 Revision: 3.1 Seite/page 2/11