Please note that Cypress is an Infineon Technologies Company. The document following this cover page is marked as Cypress document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. www.infineon.comS27KL0643/S27KS0643 3.0 V/1.8 V, 64 Mb (8 MB) HyperRAM Self-Refresh DRAM S27KL0643/S27KS0643, 3.0 V/1.8 V, 64 Mb (8 MB), HyperRAM Self-Refresh DRAM Wrapped burst lengths: Features 16 bytes (8 clocks) Interface 32 bytes (16 clocks) 64 bytes (32 clocks) xSPI (Octal) Interface 128 bytes (64 clocks) 1.8 V / 3.0 V Interface support Hybrid option - one wrapped burst followed by linear burst Single ended clock (CK) - 11 bus signals Configurable output drive strength Optional Differential clock (CK, CK ) - 12 bus signals Power Modes Chip Select (CS ) Hybrid Sleep Mode 8-bit data bus (DQ 7:0 ) Deep Power Down Hardware reset (RESET ) Array Refresh Bidirectional Read-Write Data Strobe (RWDS) Partial Memory Array (1/8, 1/4, 1/2, and so on) Full Output at the start of all transactions to indicate refresh latency Package Output during read transactions as Read Data Strobe 24-ball FBGA Input during write transactions as Write Data Mask Operating Temperature Range Optional DDR Center-Aligned Read Strobe (DCARS) Industrial (I): 40 C to +85 C During read transactions RWDS is offset by a second clock, Industrial Plus (V): 40 C to +105 C phase shifted from CK Automotive, AEC-Q100 Grade 3: 40 C to +85 C The Phase Shifted Clock is used to move the RWDS Automotive, AEC-Q100 Grade 2: 40 C to +105C transition edge within the read data eye Technology Performance, Power, and Packages 38 nm DRAM 200 MHz maximum clock rate DDR - transfers data on both edges of the clock Data throughput up to 400 MBps (3,200 Mbps) Configurable Burst Characteristics Linear burst Performance Summary Read Transaction Timings Unit Maximum Clock Rate at 1.8 V V /V Q 200 MHz CC CC Maximum Clock Rate at 3.0 V V /V Q 200 MHz CC CC Maximum Access Time, (t ) 35 ns ACC Maximum Current Consumption Unit Burst Read or Write (linear burst at 200 MHz, 1.8 V) 25 mA Burst Read or Write (linear burst at 200 MHz, 3.0 V) 30 mA Standby (CS = V = 3.6 V, 105 C) 360 A CC Deep Power Down (CS = V = 3.6 V, 105 C) 15 A CC Standby (CS = V = 2.0 V, 105 C) 330 A CC Deep Power Down (CS = V = 2.0 V, 105 C) 12 A CC Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-24693 Rev. *D Revised November 25, 2019