Product Information

65DN06 ELEM

65DN06 ELEM electronic component of Infineon

Datasheet
Infineon Technologies Rectifiers 600V 8.47KA

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

1: AUD 930.4808 ( AUD 1023.53 Inc GST) ea
Line Total: AUD 930.4808 ( AUD 1023.53 Inc GST)

1 - Global Stock
Ships to you between
Fri. 26 Jul to Tue. 30 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - Global Stock


Ships to you between Fri. 26 Jul to Tue. 30 Jul

MOQ : 1
Multiples : 1

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65DN06 ELEM
Infineon

1 : AUD 702.7562
10 : AUD 702.7562
25 : AUD 698.7754
50 : AUD 679.7208
100 : AUD 679.7031

     
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Vr - Reverse Voltage
If - Forward Current
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Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
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Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode 65DN06 Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / maximum rated values V 600V Periodische Spitzensperrspannung T = -40C... T RRM vj vj max Kenndaten repetitive peak reverse voltages Elektrische Eigenschaften Durchlastrom-Grenzeffektivwert I 13300 A FRMSM maximum RMS on-state current T = 129 C C Dauerg renzstrom I 8470A FAVM average on-state current Stostrom-Grenzwert T = 25 C, t = 10 ms I 103000 A vj P FSM surge current T = Tvj max, t = 10 ms 95000 A vj P Grenzlastintegral T = 25 C, t = 10 ms It 53000 10As vj P It-value T = Tvj max, t = 10 ms 45000 10As vj P Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 10 kA v max. 0,98V vj vj max F F on-state voltage Schleusenspannung T = T V 0,7 V vj vj max (TO) threshold voltage m Ersatzwiderstand T = T r 0,027 vj vj max T slope resistance T = T A= 2,460E-01 Durchlakennlinie 4000 A i 40000 A vj vj max F B= 1,982E-05 on-state characteristic C= 6,119E-02 v = A + B i + C ln ( i + 1 ) + D i F D= -3,675E-04 F F F max. Sperrstrom T = T , v = V i 100 mA vj vj max R RRM R reverse current Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand Khlflche / cooling surface R thJC beidseitig / two-sided, = 180sin max. 0,0047 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,0040 C/W Thermische Eigenschaften bergangs-Wrmewiderstand Khlflche / cooling surface R thCH 0,0025 beidseitig / two-sided max. C/W thermal resistance, case to heatsink 180 Hchstzulssige Sperrschichttemperatur T C vj max maximum junction temperature Betriebstemperatur T -40...+180C c op operating temperature T -40...+180C Lagertemperatur stg storage temperature Mechani sche Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 2 case, see annex page 2 Si-Element mit Druckkontakt Si-pellet with pressure contact F 55...80 kN Anprekraft clamping force G typ. 155g Gewicht weight 50m/s Schwingfestigkeit f = 50 Hz vibration resistance prepared by: H.Sandmann date of publication: 2011-02-17 approved by: M.Leifeld revision: 3.0 Seite/page IFBIP D AEC / 2011-02-17, H.Sandmann A 06/11 1/7 Datenblatt / Data sheet N Netz-Gleichrichterdiode Rectifier Diode 65DN06 Mabild Mabild Hinweis: Wir empfehlen die Diode mit einem temperaturbestndigen O-Ring zu schtzen. Notice: We recommended to protect the diode with a temperature resistant O-Ring. 1: Anode/ Anode 12 2: Kathode/ Cathode Seite/page IFBIP D AEC / 2011-02-17, H.Sandmann A 06/11 2/7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Infineon Technologies Americas Corp.
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