PZTA42 NPN Silicon High-Voltage Transistors High breakdown voltage 4 3 Low collector-emitter saturation voltage 2 1 Complementary type: PZTA92 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package PZTA42 PZTA42 1=B 2=C 3=E 4=C - - SOT223 Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage V CEO 300 Collector-base voltage V CBO 6 Emitter-base voltage V EBO 500 mA Collector current I C 100 Base current I B 1.5 W Total power dissipation- P tot T 124 C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 1) K/W Junction - soldering point R 17 thJS 1 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 1 2011-07-25PZTA42 Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 300 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B Collector-base breakdown voltage V 300 - - (BR)CBO I = 100 A, I = 0 C E Emitter-base breakdown voltage V 6 - - (BR)EBO I = 100 A, I = 0 E C Collector-base cutoff current I A CBO V = 200 V, I = 0 - - 0.1 CB E V = 200 V, I = 0 , T = 150 C - - 20 CB E A - - 100 nA Emitter-base cutoff current I EBO V = 5 V, I = 0 EB C 1) - DC current gain h FE I = 1 mA, V = 10 V 25 - - C CE I = 10 mA, V = 10 V 40 - - C CE I = 30 mA, V = 10 V 40 - - C CE 1) Collector-emitter saturation voltage V - - 0.5 V CEsat I = 20 mA, I = 2 mA C B 1) Base emitter saturation voltage V - - 0.9 BEsat I = 20 mA, I = 2 mA C B AC Characteristics - 70 - MHz Transition frequency f T I = 20 MHz, V = 10 V, f = 20 MHz C CE - - 3 pF Collector-base capacitance C cb V = 20 V, f = 1 MHz CB 1 Pulse test: t < 300s D < 2% 2 2011-07-25